| 491 |
|
A model of continuous polymers with random charges
|
Buffet, E
|
American Institute of Physics
|
1980
|
|
|
|
| 492 |
|
Magnetism of perovskite manganese oxide La~1~/~3Nd~1~/~3Ca~1~/~3MnO~3
|
Rao, G. H
|
American Institute of Physics
|
1980
|
|
|
|
| 493 |
|
Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media
|
Peng, C
|
American Institute of Physics
|
1980
|
|
|
|
| 494 |
|
Internal dynamics contributions to the CH stretching overtone spectra ofgaseous nitromethane NO~2CH~3
|
Cavagnat, D
|
American Institute of Physics
|
1980
|
|
|
|
| 495 |
|
A low temperature gate oxide process for n-channel SiGe modulation dopedfield effect transistors
|
Bozon, B
|
American Institute of Physics
|
1980
|
|
|
|
| 496 |
|
Photoluminescence studies of hydrogenated amorphous carbon and its alloys
|
Liu, S
|
American Institute of Physics
|
1980
|
|
|
|
| 497 |
|
Effects of dopant concentration, crystallographic orientation, and crystal morphology on secondary electron emission from diamond
|
Miller, J. B
|
American Institute of Physics
|
1980
|
|
|
|
| 498 |
|
Effects of deposition temperature on the properties of hydrogenated tetrahedral amorphous carbon
|
Sattel, S
|
American Institute of Physics
|
1980
|
|
|
|
| 499 |
|
Growth and fabrication of strained-layer InGaAs/GaAs quantum well lasersgrown on GaAs(311)A substrates using only a silicon dopant
|
Takahashi, M
|
American Institute of Physics
|
1980
|
|
|
|
| 500 |
|
Synthesis and electron field emission of nanocrystalline diamond thin films grown from N~2/CH~4 microwave plasmas
|
Zhou, D
|
American Institute of Physics
|
1980
|
|
|
|
