충남대학교외국학술지지원센터

글로벌메뉴

  • HOME
  • sitemap

주메뉴


임시보관함

  • |Home >
  • 임시보관함

검색간략리스트

1.
저널기사
Depth profile of trapped charges in oxide layer of 6H-SiC metal-oxide-semiconductor structures / Yoshikawa, M / American Institute of Physics / JOURNAL OF APPLIED PHYSICS / 282 / 1980

하단메뉴