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Antimony and boron diffusion in SiGe and Si under the influence of injected point defects/ / Mcgregor, B M; Lerch, W; Loeffelmacher, D; Cooke, G A; Bonar, J M Dowsett, M G Willoughby, A F W; Dan, A H; / Chapman and Hall / Journal of materials science Materials i / p.219-222 / 2001
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