충남대학교외국학술지지원센터

글로벌메뉴

  • HOME
  • sitemap

주메뉴

저장/메일/인쇄

  • |Home >
  • 저장/메일/인쇄

검색간략리스트

저널기사
Analytical modeling of stress-induced leakage currents in 5.1-9.6-nm-thick silicon-dioxide films based on two-step inelastic trap-assisted tunneling/ / Lenski, Markus / American Institute of Physics / Journal of applied physics / 5238-5245p. / 2000
항목 :
이메일 : 제목 :

하단메뉴