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Metal to semiconductor transition on Ag/Ge(111): Surface electronic structure of the (bent radical)3 X (bent radical)3, (bent radical)39 X (bent radical)39, and 6 X 6 surfaces (4 pages)/ / Zhang, H M / Published for the American Physical Society by the American Institute of Physics / Physical review . B Condensed matter and materials physics / pp.195402- / 2001
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