1 |
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(001) GaAs substrate preparation for direct ZnSe heteroepitaxy
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Bousquet, V
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American Institute of Physics
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1980
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2 |
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(1+1)-dimensional turbulence
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Benzi, R
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American Institute of Physics
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1980
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3 |
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(100) Si/SiO~2 interface states above midgap induced by Fowler-Nordheim tunneling electron injection
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Inoue, M
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American Institute of Physics
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1980
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4 |
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(100)-textured 3% silicon steel sheets by manganese removal and decarburization
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Tomida, T
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American Institute of Physics
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1980
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5 |
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10 NEW g DORADUS AND d SCUTI STARS/
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Henry, Gregory W
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American Institute of Physics
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2001
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6 |
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(110) oriented GaAs/Al~0~.~3Ga~0~.~7As quantum wells for optimized T-shaped quantum wires
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Gislason, H
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American Institute of Physics
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1980
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7 |
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1.26 (micro)m intersubband transitions in In0.3Ga0.7As/AlAs quantum wells/
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Garcia, C�sar Pascual
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American Institute of Physics
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2000
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8 |
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^1^2^9Xe adsorbed in AlPO~4-11 molecular sieve: Molecular dynamics simulation of adsorbate dynamics and NMR chemical shift
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Kantola, J.-H
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American Institute of Physics
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1980
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9 |
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12C/13C IN METAL-POOR FIELD HALO GIANTS/
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Keller, Luke D
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American Institute of Physics
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2001
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10 |
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1.2 K Shubnikov-de Haas measurements and self-consistent calculation of silicon spreading in � and slab-doped In~0~.~5~3Ga~0~.~4~7As grown by molecular beam epitaxy
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McElhinney, M
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American Institute of Physics
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1980
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11 |
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^1^3C isotope effects for pentacene in p-terphenyl: High-resolution spectroscopy and single-spin detection
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Brouwer, A. C. J
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American Institute of Physics
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1980
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12 |
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1.3 � photoluminescence from InGaAs quantum dots on GaAs
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Mirin, R. P
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American Institute of Physics
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1980
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13 |
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1.3 � strain-compensated InAsP/InGaP electroabsorption modulator structure grown by atmospheric pressure metal-organic vapor epitaxy
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Ougazzaden, A
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American Institute of Physics
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1980
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14 |
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14.3 W quasicontinuous wave front-facet power from broad-waveguide Al-free 970 nm diode lasers
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Al-Muhanna, A
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American Institute of Physics
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1980
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15 |
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1.4 (micro)m band emission properties of Tm3+ ions in transparent glass ceramics containing PbF2 nanocrystals for S-band amplifier/
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Hayashi, Hideaki
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American Institute of Physics
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2001
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16 |
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1.54 � photoluminescence of Er^3^+ doped into SiO~2 films containing Sinanocrystals: Evidence for energy transfer from Si nanocrystals to Er^3^+
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Fujii, M
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American Institute of Physics
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1980
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17 |
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1.5 kW high-peak-power vacuum ultraviolet flash lamp using a pulsed silent discharge of krypton gas/
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Kawanaka, J
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American Institute of Physics
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2001
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18 |
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1.5 � photoluminescence of Er^3^+ in YF~3, LuF~3, and LaF~3 thin films
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Buchal, C
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American Institute of Physics
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1980
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19 |
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1.65 MICRON (H BAND) SURFACE PHOTOMETRY OF GALAXIES. VI. THE HISTORY OF STAR FORMATION IN NORMAL LATE-TYPE GALAXIES/
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Boselli, A
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American Institute of Physics
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2001
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20 |
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175 K continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5 �
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Choi, H. K
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American Institute of Physics
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1980
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