| 24401 |
|
Unusual strain relaxation in SiGe/Si heterostructures
|
Lyakas, M
|
American Institute of Physics
|
1980
|
|
|
|
| 24402 |
|
Upconversion dye-doped polymer fiber laser
|
He, G. S
|
American Institute of Physics
|
1980
|
|
|
|
| 24403 |
|
Upconversion dynamics of Er^3^+ doped RbGd~2Br~7
|
Riedener, T
|
American Institute of Physics
|
1980
|
|
|
|
| 24404 |
|
Upconversion fluorescence spectroscopy of Er^3^+/Yb^3^+-doped heavy metal Bi~2O~3-Na~2O-Nb~2O~5-GeO~2 glass
|
Oliveira, A. S
|
American Institute of Physics
|
1980
|
|
|
|
| 24405 |
|
Upconversion in Er-implanted Al~2O~3 waveguides
|
Van den Hoven, G. N
|
American Institute of Physics
|
1980
|
|
|
|
| 24406 |
|
Uphill acceleration of electrons and secular fields in laser produced plasmas
|
Ruhl, H
|
American Institute of Physics
|
1980
|
|
|
|
| 24407 |
|
Upper limit of the discrete hydrogen-like wave functions: Expansion in the inverse principal quantum number n^-^1
|
Blaive, B
|
American Institute of Physics
|
1980
|
|
|
|
| 24408 |
|
Urbach-Martienssen tails in a wurtzite GaN epilayer
|
Chichibu, S
|
American Institute of Physics
|
1980
|
|
|
|
| 24409 |
|
Useful work and the thermal efficiency in the ideal Lenolr cycle with regenerative preheating/
|
Georgiou, Demos P
|
American Institute of Physics
|
2000
|
|
|
|
| 24410 |
|
Use of a helicon-wave excited plasma for aluminum-doped ZnO thin-film sputtering
|
Yamaya, K
|
American Institute of Physics
|
1980
|
|
|
|
| 24411 |
|
Use of an active wire B~�cell for electron beam conditioning
|
Murphy, D. P
|
American Institute of Physics
|
1980
|
|
|
|
| 24412 |
|
Use of annealed low-temperature grown GaAs as a selective photoetch-stoplayer
|
Chen, E. H
|
American Institute of Physics
|
1980
|
|
|
|
| 24413 |
|
Use of dimension-dependent potentials for quasibound states
|
Germann, T. C
|
American Institute of Physics
|
1980
|
|
|
|
| 24414 |
|
Use of dipole doping to suppress switching in indium phosphide double heterojunction bipolar transistors
|
McAlister, S. P
|
American Institute of Physics
|
1980
|
|
|
|
| 24415 |
|
Use of Gauss-Hermite quadrature in the treatment of predissociation resonances with the complex-scaling method
|
Li, Y
|
American Institute of Physics
|
1980
|
|
|
|
| 24416 |
|
Use of guided spontaneous emission of a semiconductor to probe the optical properties of two-dimensional photonic crystals
|
Labilloy, D
|
American Institute of Physics
|
1980
|
|
|
|
| 24417 |
|
Use of Kramers-Kronig transforms for the treatment of admittance spectroscopy data of p-n junctions containing traps
|
Leon, C
|
American Institute of Physics
|
1980
|
|
|
|
| 24418 |
|
Use of negative complex potential as absorbing potential
|
Ge, J.-Y
|
American Institute of Physics
|
1980
|
|
|
|
| 24419 |
|
Use of nonstoichiometry to form GaAs tunnel junctions
|
Ahmed, S
|
American Institute of Physics
|
1980
|
|
|
|
| 24420 |
|
Use of oxygen-stabilized C~6~0 films for selective chemical vapor deposition
|
McGinnis, S
|
American Institute of Physics
|
1980
|
|
|
|