| 24541 |
|
Verification of hot hole scattering rates in silicon by quantum-yield experiment
|
Kamakura, Yoshinari
|
American Institute of Physics
|
2000
|
|
|
|
| 24542 |
|
Verification of magnetic field gradient effects on medium convection and cell adhesion/
|
Iwasaka, M
|
American Institute of Physics
|
2003
|
|
|
|
| 24543 |
|
Vertex normal ordering as a consequence of nonsymmetric bilinear forms in Clifford algebras
|
Fauser, B
|
American Institute of Physics
|
1980
|
|
|
|
| 24544 |
|
Vertical and adiabatic electronic excitations in biphenylene: A theoretical study
|
Beck, M. E
|
American Institute of Physics
|
1980
|
|
|
|
| 24545 |
|
Vertical bistable switching of spin vortex in a circular magnetic dot/
|
Kikuchi, N
|
American Institute of Physics
|
2001
|
|
|
|
| 24546 |
|
Vertical-cavity surface-emitting lasers with low-ripple optical pump bands
|
Knopp, K. J
|
American Institute of Physics
|
1980
|
|
|
|
| 24547 |
|
Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction/
|
Diagne, M
|
American Institute of Physics
|
2001
|
|
|
|
| 24548 |
|
Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy/
|
Stangl, J
|
American Institute of Physics
|
2000
|
|
|
|
| 24549 |
|
Vertical drift of P - E hysteresis loop in asymmetric ferroelectric capacitors
|
Zheng, L
|
American Institute of Physics
|
1980
|
|
|
|
| 24550 |
|
Vertical exchange reaction in (Ga, In)As during migration-enhanced epitaxy
|
Harris, S
|
American Institute of Physics
|
1980
|
|
|
|
| 24551 |
|
Vertically faceted lateral overgrowth of GaN on SiC with conducting buffer layers using pulsed metalorganic chemical vapor deposition/
|
Qhalid Fareed, R S
|
American Institute of Physics
|
2000
|
|
|
|
| 24552 |
|
Vertically stacked coupler and serially grafted waveguide: Hybrid waveguide structures formed using an electro-optic polymer
|
Watanabe, T
|
American Institute of Physics
|
1980
|
|
|
|
| 24553 |
|
Very high (>10^1^9 cm^-^3) in situ n-type doping of silicon during molecular beam epitaxy using supersonic jets of phosphine
|
Malik, R
|
American Institute of Physics
|
1980
|
|
|
|
| 24554 |
|
Very high- and high-confinement mode limited discharges in DIII-D
|
Jackson, G. L
|
American Institute of Physics
|
1980
|
|
|
|
| 24555 |
|
Very high carbon �doping concentration in Al~xGa~1~-~xAs grown by metalorganic vapor phase epitaxy using trimethylaluminum as a doping precursor
|
Li, G
|
American Institute of Physics
|
1980
|
|
|
|
| 24556 |
|
Very high efficiency four-wave mixing in a single semiconductor traveling-wave amplifier
|
D'Ottavi, A
|
American Institute of Physics
|
1980
|
|
|
|
| 24557 |
|
Very large amplitude intermolecular vibrations and wave function delocalization in 2,3-dimethylnaphthalene�e van der Waals complex
|
Bach, A
|
American Institute of Physics
|
1980
|
|
|
|
| 24558 |
|
Very large magnetoimpedance effect in FeCoNi ferromagnetic tubes with high order magnetic anisotropy/
|
Kurlyandskaya, G V
|
American Institute of Physics
|
2001
|
|
|
|
| 24559 |
|
Very long wavelength infrared type-II detectors operating at 80 K/
|
Mohseni, H
|
American Institute of Physics
|
2000
|
|
|
|
| 24560 |
|
Very low dark current metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers
|
Carrano, J. C
|
American Institute of Physics
|
1980
|
|
|
|
