| 1201 |
|
LETTERS - Compound Semiconductor Devices - Demonstration of Aluminum-Free Metamorphic InP/In0.53Ga0.47As/InP Double Heterojunction Bipolar Transistors on GaAs Substrates/
|
Wang, H
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1202 |
|
LETTERS - Compound Semiconductor Devices - Dual-Gate AlGaN/GaN Modulation-Doped Field-Effect Transistors with Cut-Off Frequencies ft > 60 GHz/
|
Chen, C-H
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1203 |
|
LETTERS - Compound Semiconductor Devices - High Breakdown GaN HEMT with Overlapping Gate Structure/
|
Zhang, N-Q
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1204 |
|
LETTERS - Compound Semiconductor Devices - Mismatch of MOSFET Small Signal Parameters Under Analog Operation/
|
Thewes, R
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1205 |
|
LETTERS - Compound Semiconductor Devices - Titanium Hydride Formation in Ti/Pt/Au-Gated InP HEMTs/
|
Blanchard, R R
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1206 |
|
LETTERS - Compound Semiconductor Devices - Turn-On Voltage Investigation of GaAs-Based Bipolar Transistors with Ga1-xInxAs1-yNy Base Layers/
|
Welser, R E
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1207 |
|
LETTERS - Cryogenic Microwave Amplifiers for Precision Measurements/
|
Ivanov, E N
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1208 |
|
LETTERS - Derivation of a Condition for the Normal Gain Behavior of Pyramidal Horns/
|
Selvan, K T
|
Institute of Electrical and Electronics Engineers]
|
2000
|
|
|
|
| 1209 |
|
LETTERS - Design of a Minimum-Loss Series-Fed Foldable Microstrip/
|
Christodoulou, C G
|
Institute of Electrical and Electronics Engineers]
|
2000
|
|
|
|
| 1210 |
|
LETTERS - Efficient Linear System Solution in Moment Methods Using Wavelet Expansions/
|
Tarricone, L
|
Institute of Electrical and Electronics Engineers]
|
2000
|
|
|
|
| 1211 |
|
LETTERS - Equivalence Between Local Exponential Stability of the Unique Equilibrium Point and Global Stability for Hopfield-Type Neural Networks with Two Neurons/
|
Liang, X-B
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1212 |
|
LETTERS - General Solution of a Monopole Loaded by a Dielectric Hemisphere for Efficient Computation/
|
Leung, K W
|
Institute of Electrical and Electronics Engineers]
|
2000
|
|
|
|
| 1213 |
|
LETTERS - HeteroAssociations of Spatio-Temporal Sequences with the Bidirectional Associative Memory/
|
Wang, L
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1214 |
|
LETTERS - Impedance and Polarization Characteristics of H and IHI Slot Antennas/
|
Porter, B G
|
Institute of Electrical and Electronics Engineers]
|
2000
|
|
|
|
| 1215 |
|
LETTERS - Inset Microstripline-Fed Circularly Polarized Microstrip Antennas/
|
Chen, W-S
|
Institute of Electrical and Electronics Engineers]
|
2000
|
|
|
|
| 1216 |
|
LETTERS - Learning Parametric Specular Reflectance Model by Radial Basis Function Network/
|
Cho, S-Y
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1217 |
|
LETTERS - Materials and Processing - Air-Gaps in 0.3 mm Electrical Interconnections/
|
Kohl, P A
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1218 |
|
LETTERS - Materials and Processing - Anomalous Diffusion of Boron in Silicon Driven Under the N2O Ambient/
|
Liu, D-G
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1219 |
|
LETTERS - Materials and Processing - A Shallow Trench Isolation Using Nitric Oxide (NO)-Annealed Wall Oxide to Suppress Inverse Narrow Width Effect/
|
Kim, J
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1220 |
|
LETTERS - Materials and Processing - Effect of H2 Content on Reliability of Ultrathin In-Situ Steam Generated (ISSG) SiO2/
|
Luo, T Y
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
