| 661 |
|
Titanium alloy material with very low outgassing/
|
Kurisu, H
|
Published for the Society by the American Institute of Physics
|
2003
|
|
|
|
| 662 |
|
Titanium oxide films on Si(100) deposited by e-beam evaporation/
|
Jang, H K
|
Published for the Society by the American Institute of Physics
|
2000
|
|
|
|
| 663 |
|
Ti, TiN, and Ti/TiN thin films prepared by ion beam assisted deposition as diffusion barriers between Cu and Si/
|
Mu, Haicuan
|
Published for the Society by the American Institute of Physics
|
2000
|
|
|
|
| 664 |
|
Transient plasma-induced emission analysis of laser-desorbed species during Cl2 plasma etching of Si/
|
Young Choe, Jae
|
Published for the Society by the American Institute of Physics
|
2000
|
|
|
|
| 665 |
|
Transitional change to amorphous fluorinated carbon film deposition under energetic irradiation of mass-analyzed carbon monofluoride ions on silicon dioxide surfaces/
|
Ishikawa, K
|
Published for the Society by the American Institute of Physics
|
2003
|
|
|
|
| 666 |
|
Transition from reciprocal-space to real-space surface science-advent of the scanning tunneling microscope/
|
Lagally, M. G
|
Published for the Society by the American Institute of Physics
|
2003
|
|
|
|
| 667 |
|
Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity/
|
Lucovsky, Gerald
|
Published for the Society by the American Institute of Physics
|
2001
|
|
|
|
| 668 |
|
Transitioning from the art to the science of thin films: 1964 to 2003/
|
Greene, J. E
|
Published for the Society by the American Institute of Physics
|
2003
|
|
|
|
| 669 |
|
Transmission electron microscopy of threading dislocations in ZnO films grown on sapphire/
|
Lim, Sung-Hwan
|
Published for the Society by the American Institute of Physics
|
2001
|
|
|
|
| 670 |
|
Trench filling by ionized metal physical vapor deposition/
|
Lu, Junqing
|
Published for the Society by the American Institute of Physics
|
2001
|
|
|
|
| 671 |
|
Tribocharging in electrostatic beneficiation of coal: Effects of surface composition on work function as measured by x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy in air/
|
Trigwell, S
|
Published for the Society by the American Institute of Physics
|
2001
|
|
|
|
| 672 |
|
Tribological performance of a novel high wear resistant high Si Al-Si alloy weld overlay/
|
Ott, R D
|
Published for the Society by the American Institute of Physics
|
2001
|
|
|
|
| 673 |
|
Tungsten silicide for the alternate gate metal in metal-oxide-semiconductor devices/
|
Roh, K
|
Published for the Society by the American Institute of Physics
|
2001
|
|
|
|
| 674 |
|
Two-step deposition process of piezoelectric ZnO film and its application for film bulk acoustic resonators/
|
Park, Sang-Hyun
|
Published for the Society by the American Institute of Physics
|
2000
|
|
|
|
| 675 |
|
Two-step metalorganic chemical vapor deposition growth of piezoelectric ZnO thin film on SiO2/Si substrate/
|
Muthukumar, S
|
Published for the Society by the American Institute of Physics
|
2001
|
|
|
|
| 676 |
|
Ultrahigh-rate plasma jet chemical etching of silicon/
|
Arnold, Th
|
Published for the Society by the American Institute of Physics
|
2001
|
|
|
|
| 677 |
|
Ultrathin copper aluminum and nickel aluminide protective oxidation studied with an x-ray photoelectron spectrometer/
|
Moore, J. F
|
Published for the Society by the American Institute of Physics
|
2003
|
|
|
|
| 678 |
|
Ultraviolet photoemission spectroscopy study of ultrahigh-vacuum-fractured CaVO3 surface/
|
Aiura, Y
|
Published for the Society by the American Institute of Physics
|
2001
|
|
|
|
| 679 |
|
Understanding the evolution of trench profiles in the via-first dual damascene integration scheme/
|
Kropewnicki, Tom
|
Published for the Society by the American Institute of Physics
|
2001
|
|
|
|
| 680 |
|
Using chemical probes to investigate properties of monolayer metal thin films/
|
Khan, N. A
|
Published for the Society by the American Institute of Physics
|
2003
|
|
|
|