| 81 |
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Codoping of magnetron-sputter deposited ZnS:TbOF with Ag, Cu, and Ce for electroluminescent phosphors/
|
Kim, J P
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Published for the Society by the American Institute of Physics
|
2001
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| 82 |
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Combined atomic force microscope and acoustic wave devices: Application to electrodeposition/
|
Friedt, J.-M
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Published for the Society by the American Institute of Physics
|
2003
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| 83 |
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Comment on "Quantitative analysis of annealing-induced structure disordering in ion-implanted amorphous silicon," by Ju-Yin Cheng et al., J. Vacuum Science and Technology A 20, 1855 (2002)/
|
Roorda, S
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Published for the Society by the American Institute of Physics
|
2003
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| 84 |
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Comparative ion yields by secondary ion mass spectrometry from microelectronic films/
|
Parks, Christopher C
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Published for the Society by the American Institute of Physics
|
2001
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| 85 |
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Comparison between Monte Carlo and analytical calculation of the conductance of cylindrical and conical tubes/
|
Gomez-Goni, J
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Published for the Society by the American Institute of Physics
|
2003
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| 86 |
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Comparison of phosgene formation from adsorption of carbon tetrachloride on oxygen modified Ir(111) and oxygen modified Ir(110)/
|
Meyer, R J
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Published for the Society by the American Institute of Physics
|
2001
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| 87 |
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Comparison of silicon dioxide layers grown from three polymethylsiloxane precursors in a high-density oxygen plasma/
|
Qi, Y
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Published for the Society by the American Institute of Physics
|
2003
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| 88 |
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Comparison of the stability of hot and cold cathode ionization gauges/
|
Li, D
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Published for the Society by the American Institute of Physics
|
2003
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| 89 |
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Comparison of titanium oxide films grown on bare glass and boiled glass in 50% H2SO4 by metal-organic chemical vapor deposition/
|
Jang, H K
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Published for the Society by the American Institute of Physics
|
2000
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| 90 |
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Compensation for transient chamber wall condition using real-time plasma density feedback control in an inductively coupled plasma etcher/
|
Klimecky, P. I
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Published for the Society by the American Institute of Physics
|
2003
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| 91 |
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Compositional and electrical properties of zirconium dioxide thin films chemically deposited on silicon/
|
Harasek, S
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Published for the Society by the American Institute of Physics
|
2003
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| 92 |
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Composition control and dielectric properties of bismuth zinc niobate thin films synthesized by radio-frequency magnetron sputtering/
|
Lu, J
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Published for the Society by the American Institute of Physics
|
2003
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| 93 |
|
Composition profile of heat treated carbon nitride hard coatings/
|
B�hme, O
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Published for the Society by the American Institute of Physics
|
2001
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| 94 |
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Comprehensive perspective on the mechanism of preferred orientation in reactive-sputter-deposited nitrides/
|
Kajikawa, Y
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Published for the Society by the American Institute of Physics
|
2003
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| 95 |
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Co,Ni-base alloy thin films deposited by reactive radio frequency magnetron sputtering/
|
Scardi, P
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Published for the Society by the American Institute of Physics
|
2001
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| 96 |
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Controlled coordination and oxidation states of copper and manganese cations in complex nickel-copper-cobalt-manganese oxide thin films/
|
Kukuruznyak, Dmitry A
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Published for the Society by the American Institute of Physics
|
2001
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| 97 |
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Controlling the composition of Ti~1~-~xAl~xN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition/
|
Lee, Y. J
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Published for the Society by the American Institute of Physics
|
2003
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| 98 |
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Control of pressure rise in a vacuum chamber by boron nitride and copper composite coating/
|
Oishi, T
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Published for the Society by the American Institute of Physics
|
2003
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| 99 |
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Control of the radio-frequency wave form at the chuck of an industrial oxide-etch reactor/
|
Berry, Lee
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Published for the Society by the American Institute of Physics
|
2000
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| 100 |
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"Copper electroplating for future ultralarge scale integration interconnection" (J. Vac. Sci. Technol. A 18, 656 (2000))/
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Gau, W C
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Published for the Society by the American Institute of Physics
|
2000
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