| 141 |
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Direct measurement of density-of-states effective mass and scattering parameter in transparent conducting oxides using second-order transport phenomena/
|
Young, D L
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Published for the Society by the American Institute of Physics
|
2000
|
|
|
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| 142 |
|
Dissociation reactions of hydrogen in remote plasma-enhanced chemical-vapor-deposition silicon nitride/
|
Boehme, Christoph
|
Published for the Society by the American Institute of Physics
|
2001
|
|
|
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| 143 |
|
Doping of amorphous and microcrystalline silicon films deposited at low substrate temperatures by hot-wire chemical vapor deposition/
|
Alpuim, P
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Published for the Society by the American Institute of Physics
|
2001
|
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| 144 |
|
Dry etching of SrBi2Ta2O9 thin films in Cl2/NF3/O2/Ar inductively coupled plasmas/
|
Im, Y H
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Published for the Society by the American Institute of Physics
|
2001
|
|
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| 145 |
|
Dynamical behavior of hydrogen molecule on GaAs(001) surface/
|
Ohashi, Masafumi
|
Published for the Society by the American Institute of Physics
|
2000
|
|
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| 146 |
|
Dynamic and static measurements on epitaxial Fe/Si/Fe/
|
Kuanr, B. K
|
Published for the Society by the American Institute of Physics
|
2003
|
|
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| 147 |
|
Dynamic mixing deposition of niobium nitride films by cathodic arc plasma in ambient nitrogen/
|
Zhang, T
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Published for the Society by the American Institute of Physics
|
2001
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| 148 |
|
Dynamics and thermal stability of Cs superstructures on a Pt(111) surface/
|
Kondo, Takahiro
|
Published for the Society by the American Institute of Physics
|
2001
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| 149 |
|
Edison's vacuum technology patents/
|
Waits, R. K
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Published for the Society by the American Institute of Physics
|
2003
|
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| 150 |
|
Effect of an applied voltage during annealing on the resistivity and transparency of the amorphous tin oxide films/
|
Parkansky, N
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Published for the Society by the American Institute of Physics
|
2003
|
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| 151 |
|
Effect of a thin Ni layer on hydrogenation and thermal release characteristics of Ti thin films/
|
Shi, L Q
|
Published for the Society by the American Institute of Physics
|
2000
|
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| 152 |
|
Effect of composition and microstructure on temperature coefficient of resistance of polycrystalline La1-xCaxMnO3 thin films/
|
Lai, Chih-Huang
|
Published for the Society by the American Institute of Physics
|
2001
|
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| 153 |
|
Effect of cooling conditions on plasma-carbonitrided iron surfaces/
|
Gontijo, L. C
|
Published for the Society by the American Institute of Physics
|
2003
|
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| 154 |
|
Effect of dry etching conditions on surface morphology and optical properties of GaN films in chlorine-based inductively coupled plasmas/
|
Hahn, Y B
|
Published for the Society by the American Institute of Physics
|
2001
|
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| 155 |
|
Effect of film density on electrical properties of indium tin oxide films deposited by dc magnetron reactive sputtering/
|
Choi, S K
|
Published for the Society by the American Institute of Physics
|
2001
|
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| 156 |
|
Effect of hydrogen dilution on the structure of SiOF films prepared by remote plasma enhanced chemical vapor deposition from SiF4-based plasmas/
|
Alonso, J C
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Published for the Society by the American Institute of Physics
|
2000
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| 157 |
|
Effect of magnetic field configuration in the cathodic polymerization systems with two anode magnetrons/
|
Zhao, J G
|
Published for the Society by the American Institute of Physics
|
2000
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| 158 |
|
Effect of Mg content in Cu(Mg)/SiO2/Si multilayers on the resistivity after annealing in an oxygen ambient/
|
Lee, Wonhee
|
Published for the Society by the American Institute of Physics
|
2000
|
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| 159 |
|
Effect of N~2 annealing on AlZrO oxide/
|
Petry, J
|
Published for the Society by the American Institute of Physics
|
2003
|
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| 160 |
|
Effect of oxygen stoichiometry on the ferroelectric property of epitaxial all-oxide La0.7Sr0.3MnO3/Pb(Zr0.52 Ti0.48)O3/La0.7Sr0.3MnO3 thin-film capacitors/
|
Wu, Wenbin
|
Published for the Society by the American Institute of Physics
|
2000
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Valentini, L
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