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C~4F~8 dissociation in an inductively coupled plasma/
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Radtke, M. T
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Published for the Society by the American Institute of Physics
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2003
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| 2 |
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Cell adhesion and spreading on polymer surfaces micropatterned by ion beams/
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Satriano, C
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Published for the Society by the American Institute of Physics
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2003
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| 3 |
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Characteristics of C~4F~8 plasmas with Ar, Ne, and He additives for SiO~2 etching in an inductively coupled plasma (ICP) reactor/
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Li, X
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Published for the Society by the American Institute of Physics
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2003
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| 4 |
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Characteristics of ultrathin SiO~2 films using dry rapid thermal oxidation and Pt catalyzed wet oxidation/
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Cho, M.-H
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Published for the Society by the American Institute of Physics
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2003
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| 5 |
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Characterization of B-C-N hybrid prepared by ion implantation/
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Shimoyama, I
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Published for the Society by the American Institute of Physics
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2003
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| 6 |
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Characterization of nonstoichiometric TiO~2 and ZrO~2 thin films stabilized by Al~2O~3 and SiO~2 additions/
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Kuo, D.-H
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Published for the Society by the American Institute of Physics
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2003
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| 7 |
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Characterizing topography-induced contrast in photoelectron emission microscopy/
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Siegrist, K
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Published for the Society by the American Institute of Physics
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2003
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| 8 |
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Chemical bonding of perfluoropolyether with carbon underlying layer induced by visible laser light/
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Zhu, L
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Published for the Society by the American Institute of Physics
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2003
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| 9 |
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Chemical methods of thin film deposition: Chemical vapor deposition, atomic layer deposition, and related technologies/
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Crowell, J. E
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Published for the Society by the American Institute of Physics
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2003
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| 10 |
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Chemical vapor deposition-formed p-type ZnO thin films/
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Li, X
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Published for the Society by the American Institute of Physics
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2003
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| 11 |
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Cleaning of Si and properties of the HfO~2-Si interface/
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Choi, K
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Published for the Society by the American Institute of Physics
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2003
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| 12 |
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Coadsorption of CO and hydrogen on the Zn-terminated surface of ZnO: A molecular beam study/
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Kunat, M
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Published for the Society by the American Institute of Physics
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2003
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| 13 |
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Combined atomic force microscope and acoustic wave devices: Application to electrodeposition/
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Friedt, J.-M
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Published for the Society by the American Institute of Physics
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2003
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| 14 |
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Comment on "Quantitative analysis of annealing-induced structure disordering in ion-implanted amorphous silicon," by Ju-Yin Cheng et al., J. Vacuum Science and Technology A 20, 1855 (2002)/
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Roorda, S
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Published for the Society by the American Institute of Physics
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2003
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| 15 |
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Comparison between Monte Carlo and analytical calculation of the conductance of cylindrical and conical tubes/
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Gomez-Goni, J
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Published for the Society by the American Institute of Physics
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2003
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| 16 |
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Comparison of silicon dioxide layers grown from three polymethylsiloxane precursors in a high-density oxygen plasma/
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Qi, Y
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Published for the Society by the American Institute of Physics
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2003
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| 17 |
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Comparison of the stability of hot and cold cathode ionization gauges/
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Li, D
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Published for the Society by the American Institute of Physics
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2003
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| 18 |
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Compensation for transient chamber wall condition using real-time plasma density feedback control in an inductively coupled plasma etcher/
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Klimecky, P. I
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Published for the Society by the American Institute of Physics
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2003
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| 19 |
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Compositional and electrical properties of zirconium dioxide thin films chemically deposited on silicon/
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Harasek, S
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Published for the Society by the American Institute of Physics
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2003
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| 20 |
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Composition control and dielectric properties of bismuth zinc niobate thin films synthesized by radio-frequency magnetron sputtering/
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Lu, J
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Published for the Society by the American Institute of Physics
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2003
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