| 201 |
|
Carbon at pressures in the range 0.1-1 TPa (10 Mbar)/
|
Nellis, W J
|
American Institute of Physics
|
2001
|
|
|
|
| 202 |
|
Carbon-doped boron nitride cold cathodes
|
Pryor, R. W
|
American Institute of Physics
|
1980
|
|
|
|
| 203 |
|
Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas
|
Hsu, C. C
|
American Institute of Physics
|
1980
|
|
|
|
| 204 |
|
Carbon-doped p-type AlGaAs/InAs superalloy by metalorganic chemical-vapor deposition
|
Pan, N
|
American Institute of Physics
|
1980
|
|
|
|
| 205 |
|
Carbon doping and etching of Al~xGa~1~-~xAS (0��) with carbon tetrachloride in metalorganic vapor phase epitaxy
|
Hou, H. Q
|
American Institute of Physics
|
1980
|
|
|
|
| 206 |
|
Carbon growth in diamond deposition on nickel studied in situ by soft x-ray emission spectroscopy
|
Johansson, E
|
American Institute of Physics
|
1980
|
|
|
|
| 207 |
|
Carbon-hydrogen complexes in vapor phase epitaxial GaN
|
Yi, G.-C
|
American Institute of Physics
|
1980
|
|
|
|
| 208 |
|
Carbon implantation in Al~xGa~1~-~xAs
|
Pearton, S. J
|
American Institute of Physics
|
1980
|
|
|
|
| 209 |
|
Carbon Incorporation for strain compensation during solid phase epitaxial recrystallization of SiGe on Si at 500-600 �
|
Antonell, M. J
|
American Institute of Physics
|
1980
|
|
|
|
| 210 |
|
Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy
|
Strane, J. W
|
American Institute of Physics
|
1980
|
|
|
|
| 211 |
|
Carbon-induced undersaturation of silicon self-interstitials
|
Scholz, R
|
American Institute of Physics
|
1980
|
|
|
|
| 212 |
|
Carbon nanotube field-effect inverters/
|
Liu, Xiaolei
|
American Institute of Physics
|
2001
|
|
|
|
| 213 |
|
Carbon nanotubes are coherent electron sources
|
Schmid, H
|
American Institute of Physics
|
1980
|
|
|
|
| 214 |
|
Carbon nitride thin films prepared by radio-frequency magnetron sputtering combined with a nitrogen radical beam source/
|
Xu, W
|
American Institute of Physics
|
2003
|
|
|
|
| 215 |
|
Carbon nitride thin film synthesized on iron buffer layers/
|
Lu, Y F
|
American Institute of Physics
|
2000
|
|
|
|
| 216 |
|
Carbon-related defects in carbon-doped GaAs by high-temperature annealing
|
Fushimi, H
|
American Institute of Physics
|
1980
|
|
|
|
| 217 |
|
Carbon-related platinum defects in silicon: An electron paramagnetic resonance study of high spin states
|
Scheerer, O
|
American Institute of Physics
|
1980
|
|
|
|
| 218 |
|
Carrier capture in pseudomorphically strained wurtzite GaN quantum-well lasers
|
Wang, J
|
American Institute of Physics
|
1980
|
|
|
|
| 219 |
|
Carrier capture in quantum well embedded quantum wire structures
|
Mansour, N. S
|
American Institute of Physics
|
1980
|
|
|
|
| 220 |
|
Carrier capture into InAs/GaAs quantum dots via multiple optical phonon emission
|
Feldmann, J
|
American Institute of Physics
|
2001
|
|
|
|