| 401 |
|
Characteristics of Sm~2Fe~1~7C~x compounds prepared from ball-milled blends of Sm~2Fe~1~7 and graphite
|
Mao, O
|
American Institute of Physics
|
1980
|
|
|
|
| 402 |
|
Characteristics of stacking faults in AlN thin films
|
Dovidenko, K
|
American Institute of Physics
|
1980
|
|
|
|
| 403 |
|
Characteristics of the high density plasma production by m=0 helicon wave
|
Sakawa, Y
|
American Institute of Physics
|
1980
|
|
|
|
| 404 |
|
Characteristics of the low energy photoluminescence in mc-Si films/
|
Yue, Guozhen
|
American Institute of Physics
|
2000
|
|
|
|
| 405 |
|
Characteristic temperature study of GaAsP-AlGaAs tensile strained quantum well lasers/
|
Tolliver, Todd R
|
American Institute of Physics
|
2000
|
|
|
|
| 406 |
|
Characterization and minimization of flicker in silicon light valves/
|
Huang, H C
|
American Institute of Physics
|
2001
|
|
|
|
| 407 |
|
Characterization and modelling of the strain fields associated with InGaAs layers on V-grooved InP substrates
|
Gupta, A
|
American Institute of Physics
|
1980
|
|
|
|
| 408 |
|
Characterization methodology for pseudomorphic high electron mobility transistors using surface photovoltage spectroscopy/
|
Solodky, S
|
American Institute of Physics
|
2000
|
|
|
|
| 409 |
|
Characterization of 3C-SiC crystals grown by thermal decomposition of methyltrichlorosilane
|
Steckl, A. J
|
American Institute of Physics
|
1980
|
|
|
|
| 410 |
|
Characterization of 3C-SiC films grown on monocrystalline Si by reactivehydrogen plasma sputtering
|
Sun, Y
|
American Institute of Physics
|
1980
|
|
|
|
| 411 |
|
Characterization of a-C:H:N deposition from CH~4/N~2 rf plasma using optical emission spectroscopy
|
Clay, K. J
|
American Institute of Physics
|
1980
|
|
|
|
| 412 |
|
Characterization of amorphous Ge~xSi~1~ ~-~ ~xO~y for micromachined uncooled bolometer applications/
|
Ahmed, A. H. Z
|
American Institute of Physics
|
2003
|
|
|
|
| 413 |
|
Characterization of amorphous hydrogenated carbon nitride films preparedby plasma-enhanced chemical vapor deposition using a helical resonator discharge
|
Joon Han Kim
|
American Institute of Physics
|
1980
|
|
|
|
| 414 |
|
Characterization of an F-center in an alkali halide cluster
|
Bader, R. F. W
|
American Institute of Physics
|
1980
|
|
|
|
| 415 |
|
Characterization of a partially-ionized, detached, divertor plasma
|
Knoll, D. A
|
American Institute of Physics
|
1980
|
|
|
|
| 416 |
|
Characterization of a-Si:H based metal/insulator/semiconductor structures by feedback charge capacitance-voltage measurements and charge deep-level transient spectroscopy
|
Thurzo, I
|
American Institute of Physics
|
1980
|
|
|
|
| 417 |
|
Characterization of atomic force microscope probes at low temperatures/
|
Radenovic, A
|
American Institute of Physics
|
2003
|
|
|
|
| 418 |
|
Characterization of bond and etch-back silicon-on-insulator wafers by photoluminescence under ultraviolet excitation
|
Tajima, M
|
American Institute of Physics
|
1980
|
|
|
|
| 419 |
|
Characterization of boron silicide layer deposited by ultrahigh-vacuum chemical-vapor deposition
|
Tseng, H.-C
|
American Institute of Physics
|
1980
|
|
|
|
| 420 |
|
Characterization of carbon adsorption to Si(100) surface by thermal desorption spectroscopy and x-ray photoelectron spectroscopy
|
Matsuo, N
|
American Institute of Physics
|
1980
|
|
|
|