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총 1,892건 중 1,892건 출력

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제한항목: American Institute of Physics

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검색리스트 테이블
No	서명	저자	발행처	원문제공시작년
421	Characterization of carbon nitride thin films prepared by dual ion beam sputtering	Fernandez, A	American Institute of Physics	1980

422	Characterization of C coimplanted Ge~xSi~l~-~x epitaxial layers formed by high dose Ge ion implantation in (100) Si	Lombardo, S	American Institute of Physics	1980

423	Characterization of CdSe nanocrystallite dispersions by small angle x-ray scattering	Mattoussi, H	American Institute of Physics	1980

424	Characterization of Cu-Na ion-exchanged glass waveguides	Gonella, F	American Institute of Physics	1980

425	Characterization of deep levels in 6H-SiC by optical-capacitance-transient spectroscopy/	Nakakura, Y	American Institute of Physics	2003

426	Characterization of deep levels in InGaP grown by compound-source molecular beam epitaxy/	Kim, J H	American Institute of Physics	2001

427	Characterization of defects in self-ion implanted Si using positron annihilation spectroscopy and Rutherford backscattering spectroscopy	Fujinami, M	American Institute of Physics	1980

428	Characterization of diamond deposition from chloromethane reactants by laser reflective interferometry	Wu, J.-J	American Institute of Physics	1980

429	Characterization of diffusion length degradation in Czochralski silicon solar cells	Reiss, J. H	American Institute of Physics	1980

430	Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques	Ponce, F. A	American Institute of Physics	1980

431	Characterization of electron and negative ion densities in fluorocarbon containing inductively driven plasmas/	Hebner, G A	American Institute of Physics	2001

432	Characterization of electron emission from planar amorphous carbon thin films using in situ scanning electron microscopy	Missert, N	American Institute of Physics	1980

433	Characterization of electrostatic glass actuators/	Moser, R	American Institute of Physics	2003

434	Characterization of epitaxial La~0~.~7Ba~0~.~3MnO~3 structures using ferromagnetic resonance	Robson, M. C	American Institute of Physics	1980

435	Characterization of epitaxixally grown Fe-N films by sputter beam method	Okamoto, S	American Institute of Physics	1980

436	Characterization of excimer laser annealed polycrystalline Si~1~-~xGe~x alloy thin films by x-ray diffraction and spectroscopic ellipsometry	Yu, G	American Institute of Physics	1980

437	Characterization of excimer-laser-annealed polycrystalline silicon films grown by ultrahigh-vacuum chemical vapor deposition/	Chen, Ying-Chia	American Institute of Physics	2000

438	Characterization of Fe~1~7R~2 phases (R=Pr and Sm) oxidized at 200 �	Gama, S	American Institute of Physics	1980

439	Characterization of ferroelectric lead zirconate titanate films by scanning force microscopy	Zavala, G	American Institute of Physics	1980

440	Characterization of FeSe thin films prepared on GaAs substrate by selenization technique	Takemura, Y	American Institute of Physics	1980

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