| 521 |
|
Characterization of thin films of YBa~2Cu~3O~7~-~�using an interdigitalradio frequency proximity probe technique
|
Feller, J. R
|
American Institute of Physics
|
1980
|
|
|
|
| 522 |
|
Characterization of Ti^2^+/Ti^3^+ donor level in ZnSe by isothermal capacitance transient spectroscopy
|
Okada, H
|
American Institute of Physics
|
1980
|
|
|
|
| 523 |
|
Characterization of traps in GaAs/W Schottky diodes by optical and electrical deep-level transient spectroscopy methods
|
Takanashi, Y
|
American Institute of Physics
|
1980
|
|
|
|
| 524 |
|
Characterization of ultrathin insulating Al~2O~3 films grown on Nb(110)/sapphire(0001) by tunneling spectroscopy and microscopy/
|
Dietrich, C
|
American Institute of Physics
|
2003
|
|
|
|
| 525 |
|
Characterization of ultrathin silicon oxide films with mirror-enhanced polarized reflectance Fourier transform infrared spectroscopy/
|
Cui, Zhenjiang
|
American Institute of Physics
|
2001
|
|
|
|
| 526 |
|
Characterization of ultraviolet excited Br^*-radical etching of InGaAs/InAlAs material system
|
Habibi, S
|
American Institute of Physics
|
1980
|
|
|
|
| 527 |
|
Characterization of unicompositional GaInP~2 ordering heterostructures grown by variation of V/III ratio
|
Inglefield, C. E
|
American Institute of Physics
|
1980
|
|
|
|
| 528 |
|
Characterization of wafer bonded photodetectors fabricated using variousannealing temperatures and ambients
|
Levine, B. F
|
American Institute of Physics
|
1980
|
|
|
|
| 529 |
|
Characterization of zinc blende In~xGa~1~-~xN grown by radio frequency plasma assisted molecular beam epitaxy on GaAs (001)
|
Muellhaeuser, J. R
|
American Institute of Physics
|
1980
|
|
|
|
| 530 |
|
Characterizations of crystalline structure and electrical properties of pyrolyzed polyfurfuryl alcohol
|
Wang, Z
|
American Institute of Physics
|
1980
|
|
|
|
| 531 |
|
Characterizations of deep levels in SnTe-doped GaSb by admittance spectroscopy
|
Chen, J. F
|
American Institute of Physics
|
1980
|
|
|
|
| 532 |
|
Characterization study of GaAs(001) surfaces using ion scattering spectroscopy and x-ray photoelectron spectroscopy
|
Wolan, J. T
|
American Institute of Physics
|
1980
|
|
|
|
| 533 |
|
Characterization to realize CoCr-based perpendicular magnetic recording media with high squareness and normalized coercivity/
|
Saito, S
|
American Institute of Physics
|
2003
|
|
|
|
| 534 |
|
Characterizing carrier-trapping phenomena in ultrathin SiO2 films by using the x-ray photoelectron spectroscopy time-dependent measurements/
|
Hagimoto, Y
|
American Institute of Physics
|
2000
|
|
|
|
| 535 |
|
Characterizing mechanical resonators by means of a scanning acoustic force microscope/
|
Sthal, F
|
American Institute of Physics
|
2000
|
|
|
|
| 536 |
|
Characterizing the interphase dielectric constant of polymer composite materials: Effect of chemical coupling agents/
|
Todd, M. G
|
American Institute of Physics
|
2003
|
|
|
|
| 537 |
|
Character states and generator matrix elements for Sp(4)contains as subsetSU(2) x U(1)
|
Hambli, N
|
American Institute of Physics
|
1980
|
|
|
|
| 538 |
|
Charge accumulation in GaAs/AlGaAs triple barrier resonant tunneling structures
|
Buckle, P. D
|
American Institute of Physics
|
1980
|
|
|
|
| 539 |
|
Charge-based deep level transient spectroscopy of phosphorous-doped homoepitaxial diamond/
|
Gaudin, O
|
American Institute of Physics
|
2003
|
|
|
|
| 540 |
|
Charge carrier mobility in poly(p-phenylenevinylene) studied by the time-of-flight technique
|
Lebedev, E
|
American Institute of Physics
|
1980
|
|
|
|
기사
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