| 1 |
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A conductance model (approach) for kinetic studies: The Ti-Ta-Si system/
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Pelleg, Joshua
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Published for the Society by the American Institute of Physics
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2000
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| 2 |
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C~4F~8 dissociation in an inductively coupled plasma/
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Radtke, M. T
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Published for the Society by the American Institute of Physics
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2003
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| 3 |
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Carbon deposition by electron beam cracking of hydrocarbons on Ta2Zn3O8 thin film phosphors/
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Kondoleon, Caroline A
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Published for the Society by the American Institute of Physics
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2000
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| 4 |
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Cell adhesion and spreading on polymer surfaces micropatterned by ion beams/
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Satriano, C
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Published for the Society by the American Institute of Physics
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2003
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| 5 |
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Change in surface roughness with the thickness of TiO2 film grown on MgO(001) by Ar-ion beam sputtering/
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Uchitani, Takeshi
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Published for the Society by the American Institute of Physics
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2000
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| 6 |
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Changes in surface states during epitaxial growth of BaTiO3 on SrTiO3 substrate in connection with composition deviation/
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Shimoyama, K
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Published for the Society by the American Institute of Physics
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2001
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| 7 |
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Characteristics of a taper-seal type gasket for the Conflat(R) sealing system/
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Kurokouchi, Satoshi
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Published for the Society by the American Institute of Physics
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2001
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| 8 |
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Characteristics of C~4F~8 plasmas with Ar, Ne, and He additives for SiO~2 etching in an inductively coupled plasma (ICP) reactor/
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Li, X
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Published for the Society by the American Institute of Physics
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2003
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| 9 |
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Characteristics of reactive ion etching for zinc telluride using CH4 and H2 gases/
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Guo, Q X
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Published for the Society by the American Institute of Physics
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2001
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| 10 |
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Characteristics of ultrathin SiO~2 films using dry rapid thermal oxidation and Pt catalyzed wet oxidation/
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Cho, M.-H
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Published for the Society by the American Institute of Physics
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2003
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| 11 |
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Characteristics of zinc oxide deposited on copper metallized Si substrates/
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Chang, Y S
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Published for the Society by the American Institute of Physics
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2001
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| 12 |
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Characteristics of ZnO:Cr thin films deposited by spray pyrolysis/
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Maldonado, A
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Published for the Society by the American Institute of Physics
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2000
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| 13 |
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Characteristic structures of the Si(111)-7X7 surface step studied by scanning tunneling microscopy/
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Miyake, K
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Published for the Society by the American Institute of Physics
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2001
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| 14 |
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Characterization of B-C-N hybrid prepared by ion implantation/
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Shimoyama, I
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Published for the Society by the American Institute of Physics
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2003
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| 15 |
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Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry/
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Tripathy, S
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Published for the Society by the American Institute of Physics
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2001
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| 16 |
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Characterization of nonstoichiometric TiO~2 and ZrO~2 thin films stabilized by Al~2O~3 and SiO~2 additions/
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Kuo, D.-H
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Published for the Society by the American Institute of Physics
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2003
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| 17 |
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Characterization of residues formed by anhydrous hydrogen fluoride etching of doped oxides/
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Muscat, Anthony J
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Published for the Society by the American Institute of Physics
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2001
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| 18 |
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Characterization of silicon-rich nitride and oxynitride films for polysilicon gate patterning. I. Physical characterization/
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Joseph, E A
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Published for the Society by the American Institute of Physics
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2001
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| 19 |
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Characterization of sputtered indium tin oxide layers as transparent contact material/
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Franz, Gerhard
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Published for the Society by the American Institute of Physics
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2001
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| 20 |
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Characterization of step coverage change in ultraviolet-transparent plasma enhanced chemical vapor deposition silicon nitride films/
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Bierner, J
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Published for the Society by the American Institute of Physics
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2000
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기사
(70)
