| 981 |
|
Discrete Weyl-Heisenberg transforms
|
Zak, J
|
American Institute of Physics
|
1980
|
|
|
|
| 982 |
|
DISINTEGRATING MULTIPLE SYSTEMS IN EARLY STELLAR EVOLUTION/
|
Reipurth, Bo
|
American Institute of Physics
|
2000
|
|
|
|
| 983 |
|
Dislocation behavior in InGaAs step- and alternating step-graded structures: Design rules for buffer fabrication
|
Araujo, D
|
American Institute of Physics
|
1980
|
|
|
|
| 984 |
|
Dislocation blocking in In~xGa~1~-~xAs (x<0.20) layers grown on GaAs substrates revealed by strain sensitive etching with aqueous CrO~3-HF solutions
|
MacPherson, G
|
American Institute of Physics
|
1980
|
|
|
|
| 985 |
|
Dislocation energetics in epitaxial strained islands/
|
Spencer, B J
|
American Institute of Physics
|
2000
|
|
|
|
| 986 |
|
Dislocation formation mechanism in strained In~xGa~1~-~xAs islands grownon GaAs(001) substrates
|
Chen, Y
|
American Institute of Physics
|
1980
|
|
|
|
| 987 |
|
Dislocation-free and lattice-matched Si/GaP1-xNx/Si structure for photo-electronic integrated systems/
|
Momose, Kenji
|
American Institute of Physics
|
2001
|
|
|
|
| 988 |
|
Dislocation-free InSb grown on GaAs compliant universal substrates
|
Ejeckam, F. E
|
American Institute of Physics
|
1980
|
|
|
|
| 989 |
|
Dislocation glide and blocking kinetics in compositionally graded SiGe/Si/
|
Leitz, C W
|
American Institute of Physics
|
2001
|
|
|
|
| 990 |
|
Dislocation loop evolution in ion implanted 4H-SiC/
|
Persson, P. O. A
|
American Institute of Physics
|
2003
|
|
|
|
| 991 |
|
Dislocation model of a subsurface crack
|
Yang, F
|
American Institute of Physics
|
1980
|
|
|
|
| 992 |
|
Dislocation motion in GaN light-emitting devices and its effect on device lifetime
|
Sugiura, L
|
American Institute of Physics
|
1980
|
|
|
|
| 993 |
|
Dislocation reduction in GaN films through selective island growth of InGaN/
|
Keller, S
|
American Institute of Physics
|
2000
|
|
|
|
| 994 |
|
Dislocation-related photoluminescence peak shift due to atomic interdiffusion in SiGe/Si
|
Shum, K
|
American Institute of Physics
|
1980
|
|
|
|
| 995 |
|
Dislocations and related traps in p-InGaAs/GaAs lattice-mismatched heterostructures
|
Du, A. Y
|
American Institute of Physics
|
1980
|
|
|
|
| 996 |
|
Dislocations as a source of micropipe development in the growth of silicon carbide/
|
Cherednichenko, D I
|
American Institute of Physics
|
2001
|
|
|
|
| 997 |
|
Dislocations induced by bubble formation in high energy He implantation in silicon/
|
Oliviero, E
|
American Institute of Physics
|
2001
|
|
|
|
| 998 |
|
Dislocation velocity in GeSi alloy
|
Yonenaga, I
|
American Institute of Physics
|
1980
|
|
|
|
| 999 |
|
Disorder-activated infrared modes and surface depletion layer in highly Si-doped hexagonal GaN/
|
Kasic, A
|
American Institute of Physics
|
2001
|
|
|
|
| 1000 |
|
Disorder and noncollinear magnetism in permanent-magnet materials
|
Lorenz, R
|
American Institute of Physics
|
1980
|
|
|
|