| 101 |
|
Deep-level transient spectroscopy of dislocation-related defects in epitaxial multilayer structures/
|
Thor, E
|
American Institute of Physics
|
2001
|
|
|
|
| 102 |
|
DEEP OPTICAL IMAGING OF A COMPACT GROUP OF GALAXIES: SEYFERT'S SEXTET/
|
Nishiura, Shingo
|
American Institute of Physics
|
2000
|
|
|
|
| 103 |
|
Deep states in silicon on sapphire by transient-current spectroscopy
|
Sadoh, T
|
American Institute of Physics
|
1980
|
|
|
|
| 104 |
|
Deep-ultraviolet transparent conductive b-Ga2O3 thin films/
|
Orita, Masahiro
|
American Institute of Physics
|
2000
|
|
|
|
| 105 |
|
Deexcitation of Ne(^3P~1) and Ne(^3P~2) in collisions with Ar, Kr, and Xe
|
Deba Bahadur Khadka
|
American Institute of Physics
|
1980
|
|
|
|
| 106 |
|
Defect and nanocrystal cathodoluminescence of synthetic opals infilled with Si and Pt/
|
D�z-Guerra, C
|
American Institute of Physics
|
2001
|
|
|
|
| 107 |
|
Defect and transport properties of nanocrystalline CeO~2~-~x
|
Chiang, Y.-M
|
American Institute of Physics
|
1980
|
|
|
|
| 108 |
|
Defect annealing in a II-VI laser diode structure under intense optical excitation
|
Jordan, C
|
American Institute of Physics
|
1980
|
|
|
|
| 109 |
|
Defect annealing in Cu(In,Ga)Se2 heterojunction solar cells after high-energy electron irradiation/
|
Jasenek, A
|
American Institute of Physics
|
2001
|
|
|
|
| 110 |
|
Defect characterization of etch pits in ZnSe based epitaxial layers
|
U'Ren, G. D
|
American Institute of Physics
|
1980
|
|
|
|
| 111 |
|
Defect characterization of ZnBeSe solid solutions by means of positron annihilation and photoluminescence techniques/
|
Plazaola, F
|
American Institute of Physics
|
2003
|
|
|
|
| 112 |
|
Defect clustering during ion irradiation of GaAs: Insight from molecular dynamics simulations/
|
Nordlund, K
|
American Institute of Physics
|
2001
|
|
|
|
| 113 |
|
Defect density and recombination lifetime in microcrystalline silicon absorbers of highly efficient thin-film solar cells determined by numerical device simulations/
|
Brammer, T
|
American Institute of Physics
|
2003
|
|
|
|
| 114 |
|
Defect diffusion, excess intensity, and quasielastic light scattering ofsupercooled molecular liquids
|
Wang, C. H
|
American Institute of Physics
|
1980
|
|
|
|
| 115 |
|
Defect-dipole alignment and tetragonal strain in ferroelectrics
|
Warren, W. L
|
American Institute of Physics
|
1980
|
|
|
|
| 116 |
|
Defect formation and annealing behavior of InP implanted by low-energy ^1^5N ions
|
Rauhala, E
|
American Institute of Physics
|
1980
|
|
|
|
| 117 |
|
Defect formation in GeO~2-SiO~2 glass by poling with ArF laser excitation
|
Takahashi, M
|
American Institute of Physics
|
1980
|
|
|
|
| 118 |
|
Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si~1~-~x~-~yGe~xC~y alloy layers on Si (100)
|
Amour, A. S
|
American Institute of Physics
|
1980
|
|
|
|
| 119 |
|
"Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si~1~-~x~-~yGe~xC~y alloy layers on Si (100)" [Appl. Phys. Lett. 67, 3915 (1995)]
|
St. Amour, A
|
American Institute of Physics
|
1980
|
|
|
|
| 120 |
|
Defect generation and breakdown of ultrathin silicon dioxide induced by substrate hot-hole injection/
|
Vogel, Eric M
|
American Institute of Physics
|
2001
|
|
|
|