| 61 |
|
Dielectric Science and Materials - Characteristics of Oxynitride Prepared by Liquid Phase Deposition/
|
Lee, M-K
|
Electrochemical Society
|
2001
|
|
|
|
| 62 |
|
Dielectric Science and Materials - Characteristics of Pb(Zr0.53Ti0.47)O3 on Metal and Al2O3/Si Substrates/
|
Sun, C L
|
Electrochemical Society
|
2001
|
|
|
|
| 63 |
|
Dielectric Science and Materials - Characteristics of TEOS Polysilicon Oxides: Improvement by CMP and High Temperature RTA N2/N2O Annealing/
|
Chen, J H
|
Electrochemical Society
|
2000
|
|
|
|
| 64 |
|
Dielectric Science and Materials - Characterization of Carbon-Doped SiO2 Low k Thin Films - Preparation by Plasma-Enhanced Chemical Vapor Deposition from Tetramethylsilane/
|
Han, L M
|
Electrochemical Society
|
2001
|
|
|
|
| 65 |
|
Dielectric Science and Materials - Chemical Mechanical Polishing of Low Dielectric Constant Oxide Films Deposited Using Flowfill Chemical Vapor Deposition Technology/
|
Cui, H
|
Electrochemical Society
|
2000
|
|
|
|
| 66 |
|
Dielectric Science and Materials - Comparison of Dielectric Characteristics of Ta2O5 Thin Films on RuO2 and Ru Bottom Electrodes/
|
Huang, J H
|
Electrochemical Society
|
2001
|
|
|
|
| 67 |
|
Dielectric Science and Materials - Development of Dielectric Properties of Niobium Oxide, Tantalum Oxide, and Aluminum Oxide Based Nanolayered Materials/
|
Kukli, K
|
Electrochemical Society
|
2001
|
|
|
|
| 68 |
|
Dielectric Science and Materials - Dielectric and Barrier Properties of Spin-On Organic Aromatic Low Dielectric Constant Polymers FLARE and SILK/
|
Wu, Z-C
|
Electrochemical Society
|
2001
|
|
|
|
| 69 |
|
Dielectric Science and Materials - Dielectric Properties of Zirconium Oxide Grown by Atomic layer Deposition from Iodide Precursor/
|
Kukli, K
|
Electrochemical Society
|
2001
|
|
|
|
| 70 |
|
Dielectric Science and Materials - Effect of Fictive Temperature on the Polishing Rate of Thermally Grown Silicon Dioxide/
|
Matthew, I
|
Electrochemical Society
|
2001
|
|
|
|
| 71 |
|
Dielectric Science and Materials - Effect of Post-Treatment Temperature on TiN Barrier Properties during a Two-Step Annealing for (Ba, Sr)TiO3 Dielectric Film/
|
Yoon, D-S
|
Electrochemical Society
|
2001
|
|
|
|
| 72 |
|
Dielectric Science and Materials - Effect of Surface Treatments on the Electrical Properties of Fluorinated Silicon Oxides/
|
Chang, W J
|
Electrochemical Society
|
2000
|
|
|
|
| 73 |
|
Dielectric Science and Materials - Effects of TiN Deposition on the Characteristics of W/TiN/SiO2/Si Metal Oxide Semiconductor Capacitors/
|
Park, D-G
|
Electrochemical Society
|
2001
|
|
|
|
| 74 |
|
Dielectric Science and Materials - Electrical Properties and Temperature-Humidity Studies of Fluorocarbon Films Deposited from Pentafluoroethane/Argon Plasmas/
|
Agraharam, S
|
Electrochemical Society
|
2001
|
|
|
|
| 75 |
|
Dielectric Science and Materials - Electrical Properties of SrTiO3/BaTiO3 Strained Superlattice Films Prepared by Atomic layer Mitallorganic Chemical Vapor Deposition/
|
Wang, Z
|
Electrochemical Society
|
2000
|
|
|
|
| 76 |
|
Dielectric Science and Materials - Environmental Ozone Effect on the Growth of Hemispherical Grained Silicon for ULSI DRAM Stacked Capacitor/
|
Park, Y-K
|
Electrochemical Society
|
2001
|
|
|
|
| 77 |
|
Dielectric Science and Materials - Etching Mechanism of Silicon Nitride in HF-Based Solutions/
|
Knotter, D M
|
Electrochemical Society
|
2001
|
|
|
|
| 78 |
|
Dielectric Science and Materials - Fabrication of LaAlO3/pt(100)/Hastelloy C276 and CeO2(100)/Pt(100)/Hastelloy C276 Multilayers by Metallorganic Chemical Vapor Deposition/
|
Nigro, R Lo
|
Electrochemical Society
|
2001
|
|
|
|
| 79 |
|
Dielectric Science and Materials - Growth and Characterization of Rapid Thermal Chlorinated Oxides Grown Using In Situ Generated HCl/
|
Sharangpani, R
|
Electrochemical Society
|
2001
|
|
|
|
| 80 |
|
Dielectric Science and Materials - Heat and Moisture Resistance of Siloxane-Based Low-Dielectric-Constant Materials/
|
Furusawa, T
|
Electrochemical Society
|
2001
|
|
|
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기사
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