| 461 |
|
Effects of anomalous permittivity on the microwave heating of zinc oxide
|
Martin, L. P
|
American Institute of Physics
|
1980
|
|
|
|
| 462 |
|
Effects of applied rotating magnetic perturbations on ion drift orbits in the Compact Auburn Torsatron
|
Pritchard, D. C
|
American Institute of Physics
|
1980
|
|
|
|
| 463 |
|
Effects of a quantum-mechanically driven two-state gating mode on the diffusion-influenced bimolecular reactions
|
Jung, Y
|
American Institute of Physics
|
1980
|
|
|
|
| 464 |
|
Effects of aquaregia treatment of indium-tin-oxide substrates on the behavior of double layered organic light-emitting diodes
|
Li, F
|
American Institute of Physics
|
1980
|
|
|
|
| 465 |
|
Effects of Ar bombardment on magnetic properties of Fe films deposited by double-ion-beam sputtering
|
Iwatsubo, S
|
American Institute of Physics
|
1980
|
|
|
|
| 466 |
|
Effects of a resonant shallow state on the electrical properties of Te-doped Al~xGa~1~-~xSb/
|
Ghezzi, C
|
American Institute of Physics
|
2003
|
|
|
|
| 467 |
|
Effects of arsenic concentration profile in gate oxide on electric properties of metal-oxide-silicon devices/
|
Chang-Liao, Kuei-Shu
|
American Institute of Physics
|
2001
|
|
|
|
| 468 |
|
Effects of a series resistor on electron emission from a field emitter
|
Luginsland, J. W
|
American Institute of Physics
|
1980
|
|
|
|
| 469 |
|
Effects of assistant anode on planar inductively coupled magnetized argon plasma in plasma immersion ion implantation/
|
Tang, D
|
American Institute of Physics
|
2003
|
|
|
|
| 470 |
|
Effects of a thin AlAs layer on InAs quantum dot electronic structure/
|
Movilla, J. L
|
American Institute of Physics
|
2003
|
|
|
|
| 471 |
|
Effects of atomistic defects on coherent electron transmission in Si nanowires: Full band calculations/
|
Ko, Young-Jo
|
American Institute of Physics
|
2001
|
|
|
|
| 472 |
|
Effects of BaBi2Ta2O9 thin buffer layer on crystallization and electrical properties of CaBi2Ta2O9 thin films on Pt-coated silicon/
|
Kato, Kazumi
|
American Institute of Physics
|
2001
|
|
|
|
| 473 |
|
Effects of bar length on switching field of nanoscale nickel and cobalt bars fabricated using lithography
|
Kong, L
|
American Institute of Physics
|
1980
|
|
|
|
| 474 |
|
Effects of barrier height distribution on the behavior of a Schottky diode
|
Chand, S
|
American Institute of Physics
|
1980
|
|
|
|
| 475 |
|
Effects of B doping on hydrogen desorption from Si(001) during gas-source molecular-beam epitaxy from Si~2H~6 and B~2H~6
|
Kim, H
|
American Institute of Physics
|
1980
|
|
|
|
| 476 |
|
Effects of biaxial strain on exciton resonance energies of hexagonal GaNheteroepitaxial layers
|
Chichibu, S
|
American Institute of Physics
|
1980
|
|
|
|
| 477 |
|
Effects of boundary roughness on the conductance of quantum wires/
|
Csontos, D
|
American Institute of Physics
|
2000
|
|
|
|
| 478 |
|
Effects of buffer layer on formation of domain boundaries in epilayer during film growth of GaN by low-pressure metal-organic vapor phase epitaxyon sapphire substrates
|
Cheng, L
|
American Institute of Physics
|
1980
|
|
|
|
| 479 |
|
Effects of buffer layers in epitaxial growth of SrTiO~3 thin film on Si(100)
|
Nakagawara, O
|
American Institute of Physics
|
1980
|
|
|
|
| 480 |
|
Effects of carbon implantation on generation lifetime in silicon
|
Ban, I
|
American Institute of Physics
|
1980
|
|
|
|
