| 781 |
|
Electrical alternative to pulsed fiber-delivered lasers in microsurgery
|
Palanker, D
|
American Institute of Physics
|
1980
|
|
|
|
| 782 |
|
Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag/
|
Tracy, K. M
|
American Institute of Physics
|
2003
|
|
|
|
| 783 |
|
Electrical and dielectric properties of systems of porous solids and salt-containing nonpolar liquids
|
Nettelblad, B
|
American Institute of Physics
|
1980
|
|
|
|
| 784 |
|
Electrical and electro-optical properties of Ce-doped barium titanate thin films prepared by pulsed laser deposition
|
Liu, Y
|
American Institute of Physics
|
1980
|
|
|
|
| 785 |
|
Electrical and mechanical characterization of chemical vapor deposition of tungsten on sputter-deposited TiN layers
|
Zhang, S.-L
|
American Institute of Physics
|
1980
|
|
|
|
| 786 |
|
Electrical and mechanical properties of ferroelectric thin films laser ablated from a Pb~0~.~9~7Nd~0~.~0~2(Zr~0~.~5~5Ti~0~.~4~5)O~3 target
|
Lappalainen, J
|
American Institute of Physics
|
1980
|
|
|
|
| 787 |
|
Electrical and microstructural properties of highly boron-implantation doped 6H-SiC/
|
Panknin, D
|
American Institute of Physics
|
2001
|
|
|
|
| 788 |
|
Electrical and nonlinear optical properties of KTiOPO~4 single crystals doped by Nb or Sb/
|
Voronkova, V. I
|
American Institute of Physics
|
2003
|
|
|
|
| 789 |
|
Electrical and optical characterization of conducting poly-3-methylthiophene film by THz time-domain spectroscopy/
|
Jeon, Tae-In
|
American Institute of Physics
|
2001
|
|
|
|
| 790 |
|
Electrical and optical characterization of semiconducting Ru2Si3 films and single crystals/
|
Lenssen, D
|
American Institute of Physics
|
2001
|
|
|
|
| 791 |
|
Electrical and optical properties of CNx(0<=x<=0.25) films deposited by reactive magnetron sputtering/
|
Broitman, E
|
American Institute of Physics
|
2001
|
|
|
|
| 792 |
|
Electrical and optical properties of infrared photodiodes using the InAs/Ga~1~-~xIn~xSb superlattice in heterojunctions with GaSb
|
Johnson, J. L
|
American Institute of Physics
|
1980
|
|
|
|
| 793 |
|
Electrical and optical properties of modulation-doped p-AlGaN/GaN superlattices/
|
Polyakov, A Y
|
American Institute of Physics
|
2001
|
|
|
|
| 794 |
|
Electrical and optical properties of plasma-deposited a-SiGe:H alloys: Role of growth temperature and postgrowth anneal
|
Kuznetsov, V. I
|
American Institute of Physics
|
1980
|
|
|
|
| 795 |
|
Electrical and optical properties of strongly reduced epitaxial BaTiO3-x thin films/
|
Zhao, Tong
|
American Institute of Physics
|
2000
|
|
|
|
| 796 |
|
Electrical and optical properties of the B+ and P+ implanted C60 thin films/
|
Dharmarasu, N
|
American Institute of Physics
|
2001
|
|
|
|
| 797 |
|
Electrical and optical properties of the CdS quantum wells of CdS/ZnSe heterostructures/
|
Dremel, M
|
American Institute of Physics
|
2003
|
|
|
|
| 798 |
|
Electrical and optical properties of TiO2 in accumulation and of lithium titanate Li0.5TiO2/
|
van de Krol, Roel
|
American Institute of Physics
|
2001
|
|
|
|
| 799 |
|
Electrical and optical properties of ZnS0.05Se0.95 nanocrystalline thin films/
|
Ganguly, A
|
American Institute of Physics
|
2001
|
|
|
|
| 800 |
|
Electrical and photoluminescence properties of CuInSe~2 single crystals
|
Schoen, J. H
|
American Institute of Physics
|
1980
|
|
|
|
