| 1321 |
|
ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Luminescence spectroscopy of GaN in the high-temperature regime from room temperature to 900(degree)C/
|
Young, A P
|
American Institute of Physics
|
2000
|
|
|
|
| 1322 |
|
ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Observation of EL2 and additional deep levels at low temperature in an AlGaAs/GaAs multiple-quantum-well structure/
|
Zhang, Y F
|
American Institute of Physics
|
2000
|
|
|
|
| 1323 |
|
ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Observation of resonant tunneling through a quantized state in InP quantum dots in a double-barrier heterostructure/
|
Reddy, C V
|
American Institute of Physics
|
2000
|
|
|
|
| 1324 |
|
ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Photoluminescence from sub-nanometer-thick GaN/Al0.8Ga0.2N quantum wells/
|
Someya, T
|
American Institute of Physics
|
2000
|
|
|
|
| 1325 |
|
ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Photon-induced modifications in cadmium telluride/mercury cadmium telluride heterostructure interfaces/
|
Agnihotri, O P
|
American Institute of Physics
|
2000
|
|
|
|
| 1326 |
|
ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Quantum confinement in germanium nanocrystals/
|
Niquet, Y M
|
American Institute of Physics
|
2000
|
|
|
|
| 1327 |
|
ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Room-temperature electron spin relaxation in bulk InAs/
|
Boggess, Thomas F
|
American Institute of Physics
|
2000
|
|
|
|
| 1328 |
|
ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Room temperature enhancement and inhibition of spontaneous emission in semiconductor microcavities/
|
Bourdon, G
|
American Institute of Physics
|
2000
|
|
|
|
| 1329 |
|
ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Sample size effect in photoelectrochemical etching of n-GaAs/
|
Ma, Qing
|
American Institute of Physics
|
2000
|
|
|
|
| 1330 |
|
ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Single-electron tunneling study of two-dimensional gold clusters/
|
Wang, Bing
|
American Institute of Physics
|
2000
|
|
|
|
| 1331 |
|
ELECTRONIC TRANSPORT AND SEMICONDUCTORS - The current-voltage dependence of nominally undoped thin conjugated polymer films/
|
Freire, Jos� A
|
American Institute of Physics
|
2000
|
|
|
|
| 1332 |
|
ELECTRONIC TRANSPORT AND SEMICONDUCTORS - The effect of back channel hydrogen plasma treatment on the electrical characteristics of amorphous thin film transistors/
|
Kang, S G
|
American Institute of Physics
|
2000
|
|
|
|
| 1333 |
|
ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Thermoelectric power factor in superlattice systems/
|
Broido, D A
|
American Institute of Physics
|
2000
|
|
|
|
| 1334 |
|
ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Topographic effects in low-energy radiation damage/
|
Rahman, M
|
American Institute of Physics
|
2000
|
|
|
|
| 1335 |
|
ELECTRONIC TRANSPORT AND SEMICONDUCTORS - Transparent p-type conducting CuScO2+x films/
|
Duan, N
|
American Institute of Physics
|
2000
|
|
|
|
| 1336 |
|
ELECTRONIC TRANSPORT AND SEMICONDUCTORS - X-ray photoelectron spectroscopy study of (NH4)2Sx-treated Mg-doped GaN layers/
|
Lin, Yow-Jon
|
American Institute of Physics
|
2000
|
|
|
|
| 1337 |
|
Electronic transport in thin film electroluminescence of SrS:Ce/
|
Xu, Chunxiang
|
American Institute of Physics
|
2000
|
|
|
|
| 1338 |
|
Electronic transport properties of quasicrystals
|
Roche, S
|
American Institute of Physics
|
1980
|
|
|
|
| 1339 |
|
Electronic transport properties of Sr~1~-~xLa~xTiO~3 ceramics
|
Moos, R
|
American Institute of Physics
|
1980
|
|
|
|
| 1340 |
|
Electron-impact excitation of low-lying preionization-edge n->�* and Rydberg transitions of CHF~2Cl and CHFCl~2: Absolute generalized oscillatorstrength measurement
|
Ying, J. F
|
American Institute of Physics
|
1980
|
|
|
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