| 1741 |
|
Environmental effects on the pause mode performance of metal-evaporated and metal-particle tapes
|
Patton, S. T
|
American Institute of Physics
|
1980
|
|
|
|
| 1742 |
|
Epicentral and near epicenter surface displacements on pulsed laser irradiated metallic surfaces
|
Spicer, J. B
|
American Institute of Physics
|
1980
|
|
|
|
| 1743 |
|
Epitaxial Ag templates on Si(001) for bicrystal CoCrTa media
|
Yang, W
|
American Institute of Physics
|
1980
|
|
|
|
| 1744 |
|
Epitaxial and island growth of Ag/Si(001) by rf magnetron sputtering
|
Je, J. H
|
American Institute of Physics
|
1980
|
|
|
|
| 1745 |
|
Epitaxial C49-TiSi~2 phase formation on the silicon (100)/
|
Yang, J.-M
|
American Institute of Physics
|
2003
|
|
|
|
| 1746 |
|
Epitaxial carbon nanotube film self-organized by sublimation decomposition of silicon carbide
|
Kusunoki, M
|
American Institute of Physics
|
1980
|
|
|
|
| 1747 |
|
Epitaxial crystallization during 600 � furnace annealing of amorphous Si layer deposited by low-pressure chemical-vapor-deposition and irradiated with 1-MeV Xe ions
|
Nakata, J
|
American Institute of Physics
|
1980
|
|
|
|
| 1748 |
|
Epitaxial crystallization of keV-ion-bombarded a quartz/
|
Roccaforte, F
|
American Institute of Physics
|
2001
|
|
|
|
| 1749 |
|
Epitaxial deposition and properties of Bi~2Sr~2CaCu~2O~8~+~�Bi~2Sr~2YCu~2O~8~+~�Bi~2Sr~2CaCu~2O~8~+~�trilayers
|
Cucolo, A. M
|
American Institute of Physics
|
1980
|
|
|
|
| 1750 |
|
Epitaxial diamond encapsulation of metal microprobes for high pressure experiments/
|
Weir, Samuel T
|
American Institute of Physics
|
2000
|
|
|
|
| 1751 |
|
Epitaxial Fe~1~6N~2 films grown on Si(001) by reactive sputtering
|
Brewer, M. A
|
American Institute of Physics
|
1980
|
|
|
|
| 1752 |
|
Epitaxial ferromagnetic MnAs thin films grown on Si (001): The effect ofsubstrate annealing
|
Akeura, K
|
American Institute of Physics
|
1980
|
|
|
|
| 1753 |
|
Epitaxial film thickness in the low-temperature growth of Si(100) by plasma enhanced chemical vapor deposition
|
Varhue, W. J
|
American Institute of Physics
|
1980
|
|
|
|
| 1754 |
|
Epitaxial growth and characterization of Ge~1~-~xC~x alloys on Si(100)
|
Krishnamurthy, M
|
American Institute of Physics
|
1980
|
|
|
|
| 1755 |
|
Epitaxial growth and dielectric properties of (111) oriented BaTiO3/SrTiO3 superlattices by pulsed-laser deposition/
|
Nakagawara, Osamu
|
American Institute of Physics
|
2000
|
|
|
|
| 1756 |
|
Epitaxial growth and electronic structure of a C60 derivative prepared by using a solution spray technique/
|
Shimada, T
|
American Institute of Physics
|
2001
|
|
|
|
| 1757 |
|
Epitaxial growth and properties of ferromagnetic co-doped TiO2 anatase/
|
Chambers, S A
|
American Institute of Physics
|
2001
|
|
|
|
| 1758 |
|
Epitaxial growth and transport properties of Sr~2CrWO~6 thin films/
|
Philipp, J. B
|
American Institute of Physics
|
2003
|
|
|
|
| 1759 |
|
Epitaxial growth of and silicide formation in Fe/FeSi multilayers
|
Dekoster, J
|
American Institute of Physics
|
1980
|
|
|
|
| 1760 |
|
Epitaxial growth of C~6~0 crystals vapor-deposited on a KI (001) surface
|
Yanagi, H
|
American Institute of Physics
|
1980
|
|
|
|
