| 561 |
|
Formation mechanism for ferroelectric domain structures in a LiNbO~3 optical superlattice
|
Lu, Y.-L
|
American Institute of Physics
|
1980
|
|
|
|
| 562 |
|
Formation mechanism of crystallites in the as-deposited mixed-phase low pressure chemical vapor deposition silicon thin films
|
Kim, J. H
|
American Institute of Physics
|
1980
|
|
|
|
| 563 |
|
Formation mechanism of interfacial Si-oxide layers during postannealing of Ta2O5/Si/
|
Ono, Haruhiko
|
American Institute of Physics
|
2001
|
|
|
|
| 564 |
|
Formation mechanism of stains during Si etching reaction in HF-oxidizingagent-H~2O solutions
|
Kee Suk Nahm
|
American Institute of Physics
|
1980
|
|
|
|
| 565 |
|
Formation mechanisms for carbon onions and nanocapsules in C+-ion implanted copper/
|
Abe, Hiroaki
|
American Institute of Physics
|
2001
|
|
|
|
| 566 |
|
Formation of a crystalline phase in amorphous hydrogenated carbon-germanium films by electron beam irradiation
|
Tyczkowski, J
|
American Institute of Physics
|
1980
|
|
|
|
| 567 |
|
Formation of a defect-free denuded zone in GaP substrate by thermal annealing/
|
Okada, Hiroshi
|
American Institute of Physics
|
2000
|
|
|
|
| 568 |
|
Formation of a graded-index waveguide in UV exposed polyimide
|
Sarkisov, S
|
American Institute of Physics
|
1980
|
|
|
|
| 569 |
|
Formation of a Schottky barrier between eutectic Ga,In and thiophene oligomers
|
Lous, E. J
|
American Institute of Physics
|
1980
|
|
|
|
| 570 |
|
Formation of a stable decagonal quasicrystal in cobalt ion implanted aluminum
|
Chen, L. F
|
American Institute of Physics
|
1980
|
|
|
|
| 571 |
|
FORMATION OF A TIDAL DWARF GALAXY IN THE INTERACTING SYSTEM ARP 245 (NGC 2992/93
|
Duc, P-A
|
American Institute of Physics
|
2000
|
|
|
|
| 572 |
|
Formation of autoionizing atomic nitrogen from superexcited states of nitric oxide
|
Hikosaka, Y
|
American Institute of Physics
|
1980
|
|
|
|
| 573 |
|
Formation of b-C3N4 crystals at low temperature/
|
Wei, J
|
American Institute of Physics
|
2001
|
|
|
|
| 574 |
|
Formation of buried p-type conducting layers in diamond
|
Walker, R
|
American Institute of Physics
|
1980
|
|
|
|
| 575 |
|
Formation of C54 TiSi2: Effects of niobium additions on the apparent activation energy/
|
d'Heurle, F M
|
American Institute of Physics
|
2001
|
|
|
|
| 576 |
|
Formation of carbon nitride films with high N/C ratio by high-pressure radio frequency magnetron sputtering
|
Okada, T
|
American Institute of Physics
|
1980
|
|
|
|
| 577 |
|
Formation of c-axis oriented barium ferrite thin films by alternate deposition of a Fe~3O~4 layer and BaO3�e~2O~3 layer
|
Hoshi, Y
|
American Institute of Physics
|
1980
|
|
|
|
| 578 |
|
Formation of Co filled carbon nanocapsules by metal-template graphitization of diamond nanoparticles/
|
Tomita, Satoshi
|
American Institute of Physics
|
2000
|
|
|
|
| 579 |
|
Formation of coherent superdots using metal-organic chemical vapor deposition
|
Ledentsov, N. N
|
American Institute of Physics
|
1980
|
|
|
|
| 580 |
|
Formation of copper and silver nanometer dimension clusters in silica bythe sol-gel process
|
De, G
|
American Institute of Physics
|
1980
|
|
|
|