충남대학교 외국학술지지원센터

제한항목: 1980

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자료유형
- 기사 (3938)
- 연간물 (3)
- 단행본 (2)
저자
- Coffey, H. E (7)
- Wang, J (5)
- Hohn, W (4)
- Katritzky, A. R (4)
- Kendrick, B (4)
- 더보기(20)
- more...더보기 취소
출판사
- American Institute of Physics (446)
- Academic Press (237)
- Pergamon Press (200)
- American Society for Biochemistry and Molecular Biology [etc.] (196)
- National Academy of Sciences[etc.] (182)
- 더보기(20)
- more...더보기 취소
발행년도
- 1980 (3943)
언어
- 영어 (5)
소장처
- 중앙도서관 (3)
- 법학도서관 (2)

No	서명	저자	발행처	원문제공시작년
3321	Growth-inhibitory Activity and Downregulation of the Class II Tumor-suppressor Gene H-rev107 in Tumor Cell Lines and Experimental Tumors	Sers, C	Rockefeller University Press	1980

3322	Growth instabilities of CaF~2 adlayers deposited at high temperature on Si(111)	Pietsch, H	North-Holland Pub. Co	1980

3323	Growth, ion content and proline accumulation in NaCl-selected and non-selected cell lines of lucerne cultured on sodium and potassium salts	Chaudhary, M. T	Elsevier Scientific Publishers Ireland Ltd	1980

3324	Growth kinetics and morphology of high quality AIN grown on Si(111) by plasma-assisted molecular beam epitaxy	Calleja, E	American Institute of Physics	1980

3325	Growth Kinetics of a Bacteriophage in Continuous Culture	Schwienhorst, A	John Wiley ＆ Sons[etc.]	1980

3326	Growth kinetics of aluminum on the Si(100) surface studied by scanning tunneling microscopy	Zhu, C	North-Holland Pub. Co	1980

3327	Growth kinetics of amorphous interlayers and formation of crystalline silicide phases in ultrahigh vacuum deposited polycrystalline Er and Tb thin films on (001)Si	Luo, C. H	American Institute of Physics	1980

3328	Growth kinetics of Ar monolayers physisorbed on graphite(001)	Baer, T	North-Holland Pub. Co	1980

3329	Growth kinetics of CoSi formed by ion beam irradiation at room temperature	Baba, A	American Institute of Physics	1980

3330	Growth kinetics of furnace silicon oxynitridation in nitrous oxide ambients	Singhvi, S	American Institute of Physics	1980

3331	Growth kinetics of intermediate compounds at a planar solid-solid or solid-liquid interlace by diffusion mechanisms	Coulet, A	American Institute of Physics	1980

3332	Growth kinetics of L-aminoacylase-producing Pseudomonas sp. BA2	Bodalo Santoyo, A	Pergamon Press	1980

3333	Growth kinetics of ultrathin silicon dioxide films formed by oxidation in a N~2O ambient	Koyama, N	American Institute of Physics	1980

3334	Growth Maintenance of the Maize Primary Root at Low Water Potentials Involves Increases in Cell-Wall Extension Properties, Expansin Activity, andWall Susceptibility to Expansins	Wu, Y	American Society of Plant Physiologists	1980

3335	Growth mechanism and electrical properties of metallic films deposited on silicone oil surfaces	Ge, H	American Institute of Physics	1980

3336	Growth mechanism of iron-filled carbon nanotubules	Zhang, G. L	American Institute of Physics	1980

3337	Growth mechanism of nanoparticles prepared by radio frequency sputtering	Hirasawa, M	American Institute of Physics	1980

3338	Growth mechanism of silicon carbide films on silicon substrates using C~6~0 carbonization	Chen, D	North-Holland Pub. Co	1980

3339	Growth mechanism of YMnO~3 film as a new candidate for nonvolatile memory devices	Fujimura, N	American Institute of Physics	1980

3340	Growth mechanisms of epitaxial metallic oxide SrRuO~3 thin films studiedby scanning tunneling microscopy	Rao, R. A	American Institute of Physics	1980

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