| 3381 |
|
Growth of diamond on silicon during the bias pretreatment in chemical vapor deposition of polycrystalline diamond films
|
Stoekel, R
|
American Institute of Physics
|
1980
|
|
|
|
| 3382 |
|
Growth of epitaxial a-axis and c-axis oriented Sr~2RuO~4 films
|
Madhavan, S
|
American Institute of Physics
|
1980
|
|
|
|
| 3383 |
|
Growth of epitaxial GaN films by pulsed laser deposition
|
Vispute, R. D
|
American Institute of Physics
|
1980
|
|
|
|
| 3384 |
|
Growth of epitaxial monolayers
|
Henzler, M
|
North-Holland Pub. Co
|
1980
|
|
|
|
| 3385 |
|
Growth of epitaxial SrS:Eu,Sm films by pulsed laser deposition
|
Pique, A
|
American Institute of Physics
|
1980
|
|
|
|
| 3386 |
|
Growth of Er-doped silicon using metalorganics by plasma-enhanced chemical vapor deposition
|
Andry, P. S
|
American Institute of Physics
|
1980
|
|
|
|
| 3387 |
|
Growth of Fe~xNi~1~-~x ultrathin films on Cu(100) near the invar concentration
|
Schumann, F. O
|
American Institute of Physics
|
1980
|
|
|
|
| 3388 |
|
Growth of fluctuations under microgravity in liquid Bi-Ga alloys
|
Itami, T
|
North-Holland
|
1980
|
|
|
|
| 3389 |
|
Growth of freshly nucleated particles in the troposphere: Roles of NH~3,H~2SO~4, HNO~3, and HCl
|
Kerminen, V.-M
|
William Byrd Press for John Hopkins Press
|
1980
|
|
|
|
| 3390 |
|
Growth of GaN films on CoGa(001): an EELS and AES study
|
Gassmann, P
|
North-Holland Pub. Co
|
1980
|
|
|
|
| 3391 |
|
Growth of GaN on sapphire (0001) using a supersonic jet of plasma-generated atomic nitrogen
|
Sellidj, A
|
American Institute of Physics
|
1980
|
|
|
|
| 3392 |
|
"Growth of germanium-carbon alloys on silicon substrates by molecular beam epitaxy" [Appl. Phys. Lett. 67, 1865 (1995)]
|
Kolodzey, J
|
American Institute of Physics
|
1980
|
|
|
|
| 3393 |
|
Growth of giant magnetoresistance spin valves using Pb and Au as surfactants
|
Egelhoff, W. F
|
American Institute of Physics
|
1980
|
|
|
|
| 3394 |
|
Growth of Gracilaria bursa-pastoris in a Mediterranean Lagoon: Thau, France
|
De Casabianca, M. L
|
de Gruyter
|
1980
|
|
|
|
| 3395 |
|
Growth of hcp Cu on W(100)
|
Wormeester, H
|
North-Holland Pub. Co
|
1980
|
|
|
|
| 3396 |
|
Growth of HgBa~2Ca~2Cu~3O~8~+~�thin films on LaAlO~3 substrates using fast temperature ramping Hg-vapor annealing
|
Yun, S. H
|
American Institute of Physics
|
1980
|
|
|
|
| 3397 |
|
Growth of HgCdTe and CdTe(331)B on germanium substrate by molecular beamepitaxy
|
Zanatta, J. P
|
American Institute of Physics
|
1980
|
|
|
|
| 3398 |
|
Growth of highly textured LiNbO~3 thin film on Si with MgO buffer layer through the sol-gel process
|
Yoon, J.-G
|
American Institute of Physics
|
1980
|
|
|
|
| 3399 |
|
Growth of high quality Al~0~.~2~2Ga~0~.~7~8As layers on Si substrates bymetalorganic chemical vapor deposition
|
Baskar, K
|
American Institute of Physics
|
1980
|
|
|
|
| 3400 |
|
Growth of high quality Al~0~.~4~8In~0~.~5~2As/Ga~0~.~4~7In~0~.~5~3As heterostructures using strain relaxed Al~xGa~yIn~1~-~z~-~yAS buffer layers on GaAs
|
Haupt, M
|
American Institute of Physics
|
1980
|
|
|
|