| 21 |
|
A giant magnetoresistance sensor for high magnetic field measurements/
|
Mancoff, F B
|
American Institute of Physics
|
2000
|
|
|
|
| 22 |
|
A Gibbs ensemble Monte Carlo study of phase coexistence in model C~6~0
|
Caccamo, C
|
American Institute of Physics
|
1980
|
|
|
|
| 23 |
|
A gigahertz-range electromagnetic wave absorber with wide bandwidth madeof hexagonal ferrite
|
Matsumoto, M
|
American Institute of Physics
|
1980
|
|
|
|
| 24 |
|
A global A-state potential surface for H~2O: Influence of excited stateson the O(^1D) + H~2 reaction
|
Schatz, G. C
|
American Institute of Physics
|
1980
|
|
|
|
| 25 |
|
A GLOBAL PHOTOMETRIC ANALYSIS OF 2MASS CALIBRATION DATA/
|
Nikolaev, Sergei
|
American Institute of Physics
|
2000
|
|
|
|
| 26 |
|
A grand canonical simulation technique for dense and confined fluids with application to a Lennard-Jones fluid
|
Attard, P
|
American Institute of Physics
|
1980
|
|
|
|
| 27 |
|
A gratingless wavelength stabilized semiconductor laser
|
Pezeshki, B
|
American Institute of Physics
|
1980
|
|
|
|
| 28 |
|
A grid representation for spherical angles: Decoupling of the angular momentum operator
|
Dai, J
|
American Institute of Physics
|
1980
|
|
|
|
| 29 |
|
G106.3 + 2.7: A SUPERNOVA REMNANT IN A LATE STAGE OF EVOLUTION/
|
Pineault, Serge
|
American Institute of Physics
|
2000
|
|
|
|
| 30 |
|
Ga^0^.^2^5In^0^.^7^5As/InP quantum wells with extremely high and anisotropic two-dimensional electron gas mobilities
|
Ramvall, P
|
American Institute of Physics
|
1980
|
|
|
|
| 31 |
|
GaAs/AlAs/Si heterostructures for blocking dark current injection in impurity-band-conduction photodetectors
|
Martin, B. G
|
American Institute of Physics
|
1980
|
|
|
|
| 32 |
|
GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates
|
Sengupta, D. K
|
American Institute of Physics
|
1980
|
|
|
|
| 33 |
|
GaAs/AlGaAs quantum-well photodetector for visible and middle infrared dual-band detection/
|
Liu, H C
|
American Institute of Physics
|
2000
|
|
|
|
| 34 |
|
GaAs/AlGaAs quantum wires fabricated by SiO~2 capping-induced intermixing
|
Pepin, A
|
American Institute of Physics
|
1980
|
|
|
|
| 35 |
|
GaAs/AlGaAs ridge lasers with etched mirrors formed by an inductively coupled plasma reactor
|
Horst, S. C
|
American Institute of Physics
|
1980
|
|
|
|
| 36 |
|
GaAs based anti-resonant Fabry-Perot saturable absorber fabricated by metal organic vapor phase epitaxy and ion implantation
|
Lederer, M. J
|
American Institute of Physics
|
1980
|
|
|
|
| 37 |
|
GaAs-based multiple quantum well tunneling injection lasers
|
Zhang, X
|
American Institute of Physics
|
1980
|
|
|
|
| 38 |
|
GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices/
|
Nakajima, Fumito
|
American Institute of Physics
|
2001
|
|
|
|
| 39 |
|
GaAs multilayer p^+-i homojunction far-infrared detectors
|
Perera, A. G. U
|
American Institute of Physics
|
1980
|
|
|
|
| 40 |
|
GaAs nanocrystals formed by sequential ion implantation
|
White, C. W
|
American Institute of Physics
|
1980
|
|
|
|