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제한항목: American Institute of Physics

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검색리스트 테이블
No	서명	저자	발행처	원문제공시작년
421	Growth and characterization of heteroepitaxial CdTe and ZnTe on Ge(001) buffer layers	Smith, D. J	American Institute of Physics	1980

422	Growth and characterization of II-VI blue light-emitting diodes using short period superlattices	Wu, B. J	American Institute of Physics	1980

423	Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range	Mohseni, H	American Institute of Physics	1980

424	Growth and characterization of InSbBi for long wavelength infrared photodetectors	Lee, J. J	American Institute of Physics	1980

425	Growth and characterization of (InSb)~m(InP)~n short period superlattices	Utzmeier, T	American Institute of Physics	1980

426	Growth and characterization of K~3Li~2(Ta~xNb~1~-~x)~5O~1~5 crystals forblue second-harmonic-generation applications	Furukawa, Y	American Institute of Physics	1980

427	Growth and characterization of low-temperature grown GaN with high Fe doping/	Akinaga, H	American Institute of Physics	2000

428	Growth and characterization of magnetoresistive La-Ca-Mn-O films on Si(100) and Si(111) substrates	Kung, P.-J	American Institute of Physics	1980

429	Growth and characterization of mid-infrared InGaAs/InAlAs strained triple-quantum-well light-emitting diodes grown on lattice-mismatched GaAs substrates	Grietens, B	American Institute of Physics	1980

430	Growth and characterization of non-c-oriented epitaxial ferroelectric SrBi2Ta2O9 films on buffered Si(100)/	Lee, Ho Nyung	American Institute of Physics	2000

431	Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films	Koizumi, S	American Institute of Physics	1980

432	Growth and characterization of phosphorus doped diamond films using trimethyl phosphite as the doping source	Roychoudhury, R	American Institute of Physics	1980

433	Growth and characterization of p-type HgTe/Hg1-xCdxTe single quantum wells using nitrogen and arsenic/	Ortner, K	American Institute of Physics	2001

434	Growth and characterization of silicon thin films employing supersonic jets of SiH~4 on polysilicon and Si(100)	Mullins, C. B	American Institute of Physics	1980

435	Growth and characterization of Y2O3:Eu on Si and yttria-stabilized zirconia/	Joo Rhee, Seuk	American Institute of Physics	2001

436	Growth and characterizations of GaN on SiC substrates with buffer layers	Lin, C. F	American Institute of Physics	1980

437	Growth and collapse of structural patterns in the hydrogen bond network in liquid water	Shiratani, E	American Institute of Physics	1980

438	Growth and decay of macroparticles: A feasible approach to clean vacuum arc plasmas?	Anders, A	American Institute of Physics	1980

439	Growth and doping of Si layers by molecular-jet chemical vapor deposition: Device fabrication	Lubben, D	American Institute of Physics	1980

440	Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition	Wang, C.-J	American Institute of Physics	1980

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