| 461 |
|
Growth and properties of scandium epitaxial films on GaN
|
Kaplan, R
|
American Institute of Physics
|
1980
|
|
|
|
| 462 |
|
Growth and spectroscopic analysis of Yb^3^+-doped Y~3Al~5O~1~2 fiber single crystals/
|
Yoshikawa, A
|
American Institute of Physics
|
2003
|
|
|
|
| 463 |
|
Growth and strain symmetrization of Si/Ge/C/Sn quaternary alloys by molecular beam epitaxy
|
Guarin, F. J
|
American Institute of Physics
|
1980
|
|
|
|
| 464 |
|
Growth and stress relaxation of Co/NiO bilayers on MgO(001)/
|
Warot, B
|
American Institute of Physics
|
2001
|
|
|
|
| 465 |
|
Growth and structural characterization of highly oriented sputter-deposited (111), (110), and (100) Co/Cu superlattices
|
Smith, D. J
|
American Institute of Physics
|
1980
|
|
|
|
| 466 |
|
Growth and structural properties of epitaxial Pb(Zr~xTi~1~-~x)O~3 films and Pb(Zr~xT~1~-~x)O~3-cuprate heterostructures
|
Triscone, J.-M
|
American Institute of Physics
|
1980
|
|
|
|
| 467 |
|
Growth and thermal behavior of sputtered Mo/Al~2O~3 multilayers
|
Veldkamp, M
|
American Institute of Physics
|
1980
|
|
|
|
| 468 |
|
Growth and ultraviolet application of Li~2B~4O~7 crystals: Generation ofthe fourth and fifth harmonics of Nd:Y~3Al~5O~1~2 lasers
|
Komatsu, R
|
American Institute of Physics
|
1980
|
|
|
|
| 469 |
|
Growth and vertical correlation of CdSe/ZnSe quantum dots/
|
Litvinov, D
|
American Institute of Physics
|
2001
|
|
|
|
| 470 |
|
Growth and x-ray characterization of strain compensated GaAs/AlAs distributed Bragg reflectors
|
Mazuelas, A
|
American Institute of Physics
|
1980
|
|
|
|
| 471 |
|
Growth anisotropy and self-shadowing: A model for the development of in-plane texture during polycrystalline thin-film growth
|
Karpenko, O. P
|
American Institute of Physics
|
1980
|
|
|
|
| 472 |
|
Growth conditions for complete substitutional carbon incorporation into Si~1~-~yC~y layers grown by molecular beam epitaxy
|
Zerlauth, S
|
American Institute of Physics
|
1980
|
|
|
|
| 473 |
|
Growth defects in GaN films on 6H-SiC substrates
|
Chien, F. R
|
American Institute of Physics
|
1980
|
|
|
|
| 474 |
|
Growth diagram and morphologies of AlN thin films grown by molecular beam epitaxy/
|
Koblmueller, G
|
American Institute of Physics
|
2003
|
|
|
|
| 475 |
|
Growth-induced uniaxial anisotropy in grazing-incidence deposited magnetic films
|
van Dijken, Sebastiaan
|
American Institute of Physics
|
2000
|
|
|
|
| 476 |
|
Growth kinetics and morphology of high quality AIN grown on Si(111) by plasma-assisted molecular beam epitaxy
|
Calleja, E
|
American Institute of Physics
|
1980
|
|
|
|
| 477 |
|
Growth kinetics of amorphous interlayers and formation of crystalline silicide phases in ultrahigh vacuum deposited polycrystalline Er and Tb thin films on (001)Si
|
Luo, C. H
|
American Institute of Physics
|
1980
|
|
|
|
| 478 |
|
Growth kinetics of CoSi formed by ion beam irradiation at room temperature
|
Baba, A
|
American Institute of Physics
|
1980
|
|
|
|
| 479 |
|
Growth kinetics of furnace silicon oxynitridation in nitrous oxide ambients
|
Singhvi, S
|
American Institute of Physics
|
1980
|
|
|
|
| 480 |
|
Growth kinetics of intermediate compounds at a planar solid-solid or solid-liquid interlace by diffusion mechanisms
|
Coulet, A
|
American Institute of Physics
|
1980
|
|
|
|