충남대학교 외국학술지지원센터

글로벌메뉴

주메뉴

이용안내
원문검색
센터소개
- 소개
- 연혁
- 운영시간
- 조직
게시판
- 이용안내
- 원문검색
- 센터소개
  - 소개
  - 연혁
  - 운영시간
  - 조직
- 게시판

CNU Search

|Home >
원문검색>
CNU Search>
가나다리스트

탭메뉴

전체 ㅣ A B C D E F G H I J K L M N O P Q R S T U V W X Y Z ㅣ 가 나 다 라 마 바 사 아 자 차 카 타 파 하 기타

검색어[가나다ABC : G]

총 639건 중 639건 출력

25/32 페이지

제한항목: American Institute of Physics

검색간략리스트

검색리스트 테이블
No	서명	저자	발행처	원문제공시작년
481	Growth kinetics of ultrathin silicon dioxide films formed by oxidation in a N~2O ambient	Koyama, N	American Institute of Physics	1980

482	Growth mechanism and electrical properties of metallic films deposited on silicone oil surfaces	Ge, H	American Institute of Physics	1980

483	Growth mechanism of iron-filled carbon nanotubules	Zhang, G. L	American Institute of Physics	1980

484	Growth mechanism of nanoparticles prepared by radio frequency sputtering	Hirasawa, M	American Institute of Physics	1980

485	Growth mechanism of YMnO~3 film as a new candidate for nonvolatile memory devices	Fujimura, N	American Institute of Physics	1980

486	Growth mechanisms of epitaxial metallic oxide SrRuO~3 thin films studiedby scanning tunneling microscopy	Rao, R. A	American Institute of Physics	1980

487	Growth, microstructure, and strain relaxation in low-temperature epitaxial Si~1~-~xGe~x alloys deposited on Si(001) from hyperthermal beams	Lee, N.-E	American Institute of Physics	1980

488	Growth model of bamboo-shaped carbon nanotubes by thermal chemical vapor deposition/	Lee, Cheol Jin	American Institute of Physics	2000

489	Growth model of CuGaSe~2 grains in a Cu-rich/Cu-poor bilayer process/	Nishiwaki, S	American Institute of Physics	2003

490	Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire/	Vigu�, F	American Institute of Physics	2001

491	Growth modes of ZnSe on GaAs	Qiu, Y	American Institute of Physics	1980

492	Growth mode, strain relief, and segregation of (Ga,In)Sb on GaSb(001) grown by molecular beam epitaxy	Bertru, N	American Institute of Physics	1980

493	Growth of {100} textured diamond films by the addition of nitrogen	Cao, G. Z	American Institute of Physics	1980

494	Growth of 1.3 � InAsP/InGaAsP laser structures by gas source molecular beam epitaxy	Thiagarajan, P	American Institute of Physics	1980

495	Growth of 6H and 4H silicon carbide single crystals by the modified Lelyprocess utilizing a dual-seed crystal method	Heydemann, V. D	American Institute of Physics	1980

496	Growth of 6H-SiC on 6H-SiC(0001) by migration enhanced epitaxy controlled to an atomic level using surface superstructures	Fissel, A	American Institute of Physics	1980

497	Growth of adherent diamond films on optically transparent sapphire substrates	Singh, R. K	American Institute of Physics	1980

498	Growth of adhesive contacts for Maxwell viscoelastic spheres	Jagota, A	American Institute of Physics	1980

499	Growth of AlBN solid solutions by organometallic vapor-phase epitaxy	Polyakov, A. Y	American Institute of Physics	1980

500	Growth of aligned carbon nanotubes by plasma-enhanced chemical vapor deposition: Optimization of growth parameters/	Tanemura, M	American Institute of Physics	2001

21 22 23 24 25 26 27 28 29 30

임시보관함보기

글로벌메뉴

주메뉴

CNU Search

탭메뉴

검색간략리스트

하단메뉴