| 501 |
|
Growth of AlN and GaN on 6H-SiC(0001) using a helium supersonic beam seeded with ammonia
|
Torres, V. M
|
American Institute of Physics
|
1980
|
|
|
|
| 502 |
|
Growth of amorphous-layer-free microcrystalline silicon on insulating glass substrates by plasma-enhanced chemical vapor deposition
|
Zhou, J.-H
|
American Institute of Physics
|
1980
|
|
|
|
| 503 |
|
Growth of apatite films by laser ablation: Reduction of the droplet areal density
|
Guillot-Noel, O
|
American Institute of Physics
|
1980
|
|
|
|
| 504 |
|
Growth of arc in high-pressure, pulsed glow discharge by gas density depletion/
|
Imada, Go
|
American Institute of Physics
|
2000
|
|
|
|
| 505 |
|
Growth of a SiC layer on Si(100) from adsorbed propene by laser melting/
|
Dragnea, Bogdan
|
American Institute of Physics
|
2001
|
|
|
|
| 506 |
|
Growth of b-axis rare earths on sapphire by molecular beam epitaxy
|
Ritley, K. A
|
American Institute of Physics
|
1980
|
|
|
|
| 507 |
|
Growth of b-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers/
|
Milosavljevic, M
|
American Institute of Physics
|
2001
|
|
|
|
| 508 |
|
Growth of c-axis oriented gallium nitride thin films on an amorphous substrate by the liquid-target pulsed laser deposition technique
|
Xiao, R. F
|
American Institute of Physics
|
1980
|
|
|
|
| 509 |
|
Growth of CdTe/MnTe tilted and serpentine lattices on vicinal surfaces
|
Hartmann, J. M
|
American Institute of Physics
|
1980
|
|
|
|
| 510 |
|
Growth of colossal magnetoresistance thin films on silicon
|
Trajanovic, Z
|
American Institute of Physics
|
1980
|
|
|
|
| 511 |
|
Growth of dark spots by interdiffusion across organic layers in organic electroluminescent devices
|
Fujihira, M
|
American Institute of Physics
|
1980
|
|
|
|
| 512 |
|
Growth of diamond films on a diamond {001}(2 x 1):H surface by time dependent Monte Carlo simulations
|
Dawnkaski, E. J
|
American Institute of Physics
|
1980
|
|
|
|
| 513 |
|
Growth of diamond films on boron nitride thin films by bias-assisted hotfilament chemical vapor deposition
|
Polo, M. C
|
American Institute of Physics
|
1980
|
|
|
|
| 514 |
|
Growth of diamond on silicon during the bias pretreatment in chemical vapor deposition of polycrystalline diamond films
|
Stoekel, R
|
American Institute of Physics
|
1980
|
|
|
|
| 515 |
|
Growth of epitaxial {111}Ni0.82Fe0.18O and the exchange anisotropy of Ni0.82Fe0.18O/Ni80Fe20/
|
Lai, Chih-Huang
|
American Institute of Physics
|
2001
|
|
|
|
| 516 |
|
Growth of epitaxial a-axis and c-axis oriented Sr~2RuO~4 films
|
Madhavan, S
|
American Institute of Physics
|
1980
|
|
|
|
| 517 |
|
Growth of epitaxial and polycrystalline thin films of the electron doped system La1-xCexMnO3 through pulsed laser deposition/
|
Mitra, C
|
American Institute of Physics
|
2001
|
|
|
|
| 518 |
|
Growth of epitaxial CoSi2 on 6H-SiC(0001)Si/
|
Platow, W
|
American Institute of Physics
|
2001
|
|
|
|
| 519 |
|
Growth of epitaxial GaN films by pulsed laser deposition
|
Vispute, R. D
|
American Institute of Physics
|
1980
|
|
|
|
| 520 |
|
Growth of epitaxial SrS:Eu,Sm films by pulsed laser deposition
|
Pique, A
|
American Institute of Physics
|
1980
|
|
|
|