| 561 |
|
Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition/
|
Zhao, G Y
|
American Institute of Physics
|
2000
|
|
|
|
| 562 |
|
Growth of single phase GaAs~1~-~xN~x with high nitrogen concentration bymetal-organic molecular beam epitaxy
|
Qiu, Y
|
American Institute of Physics
|
1980
|
|
|
|
| 563 |
|
Growth of strained InGaAs layers on InP substrates
|
Okada, T
|
American Institute of Physics
|
1980
|
|
|
|
| 564 |
|
Growth of strained-layer GaAs/Ge superlattices by magnetron sputtering: Optical and structural characterization/
|
Rosendo, E
|
American Institute of Physics
|
2001
|
|
|
|
| 565 |
|
Growth of strain-relaxed Ge films on Si(001) surfaces
|
Sakai, A
|
American Institute of Physics
|
1980
|
|
|
|
| 566 |
|
Growth of stress-released GaAs on GaAs/Si structure by metalorganic chemical vapor deposition/
|
Soga, T
|
American Institute of Physics
|
2000
|
|
|
|
| 567 |
|
Growth of strongly biaxially aligned MgB2 thin films on sapphire by postannealing of amorphous precursors/
|
Berenov, A
|
American Institute of Physics
|
2001
|
|
|
|
| 568 |
|
Growth of the Cr oxides via activated oxygen reactive molecular beam epitaxy: Comparison of the Mo and W oxides/
|
Ingle, N J C
|
American Institute of Physics
|
2001
|
|
|
|
| 569 |
|
Growth of the Rayleigh-Taylor instability in an imploding Z-pinch
|
De Groot, J. S
|
American Institute of Physics
|
1980
|
|
|
|
| 570 |
|
Growth of TiSi~2 from codeposited TiSi~x layers and interfacial layers
|
Tung, R. T
|
American Institute of Physics
|
1980
|
|
|
|
| 571 |
|
Growth of vertical-cavity surface-emitting laser structures on GaAs (311)B substrates by metalorganic chemical vapor deposition
|
Tateno, K
|
American Institute of Physics
|
1980
|
|
|
|
| 572 |
|
Growth of well-aligned carbon nanotube arrays on silicon substrates using porous alumina film as a nanotemplate/
|
Hu, Wenchong
|
American Institute of Physics
|
2001
|
|
|
|
| 573 |
|
Growth of YBa~2Cu~3O~7~-~�Ag thin films (T~c~(~0~) = 89 K) by pulsed laser ablation on polycrystalline Ba~2LaNbO~6: A new perovskite ceramic substrate
|
Kurian, J
|
American Institute of Physics
|
1980
|
|
|
|
| 574 |
|
Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies
|
Lovergine, N
|
American Institute of Physics
|
1980
|
|
|
|
| 575 |
|
Growth oscillations with monolayer periodicity monitored by ellipsometryduring metalorganic vapor phase epitaxy of GaAs(001)
|
Zettler, J.-T
|
American Institute of Physics
|
1980
|
|
|
|
| 576 |
|
Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition
|
Colocci, M
|
American Institute of Physics
|
1980
|
|
|
|
| 577 |
|
Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition/
|
Chhowalla, M
|
American Institute of Physics
|
2001
|
|
|
|
| 578 |
|
Growth rates in electromagnetically pumped free-electron lasers with axial guide magnetic field
|
Jaber, I
|
American Institute of Physics
|
1980
|
|
|
|
| 579 |
|
Growth-related stress and surface morphology in homoepitaxial SrTiO~3 films
|
Tarsa, E. J
|
American Institute of Physics
|
1980
|
|
|
|
| 580 |
|
Growth, structure and electrical properties of epitaxial thulium silicide thin films on silicon
|
Travlos, A
|
American Institute of Physics
|
1980
|
|
|
|
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