1401 |
|
GAARs and Treaties: From the Guiding Principle to the Principal Purpose Test. What Have We Gained from BEPS Action 6?
|
Andrés Báez Moreno
|
Kluwer Law International
|
|
|
|
1402 |
|
GAARかTAARか : 租税回避否認規定の現状と今後の方向性
|
長島 弘
|
ぎょうせい
|
2019
|
|
|
1403 |
|
GaAs/AlAs/Si heterostructures for blocking dark current injection in impurity-band-conduction photodetectors
|
Martin, B. G
|
American Institute of Physics
|
1980
|
|
|
1404 |
|
GaAs/AlGaAs microresonator quantum cascade lasers/
|
Gianordoli, S
|
North-Holland
|
2000
|
|
|
1405 |
|
GaAs/AlGaAs quantum cascade laser - a source for gas absorption spectroscopy/
|
Hvozdara, L
|
North-Holland
|
2000
|
|
|
1406 |
|
GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates
|
Sengupta, D. K
|
American Institute of Physics
|
1980
|
|
|
1407 |
|
GaAs/AlGaAs quantum-well photodetector for visible and middle infrared dual-band detection/
|
Liu, H C
|
American Institute of Physics
|
2000
|
|
|
1408 |
|
GaAs/AlGaAs quantum wires fabricated by SiO~2 capping-induced intermixing
|
Pepin, A
|
American Institute of Physics
|
1980
|
|
|
1409 |
|
GaAs/AlGaAs ridge lasers with etched mirrors formed by an inductively coupled plasma reactor
|
Horst, S. C
|
American Institute of Physics
|
1980
|
|
|
1410 |
|
GaAs-AlxGax-1As double-barrier heterostructure phonon laser: A full quantum treatment (13 pages)/
|
Camps, I
|
Published for the American Physical Society by the American Institute of Physics
|
2001
|
|
|
1411 |
|
Ga as an additive in the As2Te3 glass/
|
Mahadevan, S Giridhar, A
|
Chapman and Hall
|
2001
|
|
|
1412 |
|
GaAs as a backscattering crystal/
|
Alefeld, B
|
North-Holland
|
2000
|
|
|
1413 |
|
GaAs based anti-resonant Fabry-Perot saturable absorber fabricated by metal organic vapor phase epitaxy and ion implantation
|
Lederer, M. J
|
American Institute of Physics
|
1980
|
|
|
1414 |
|
GaAs-based multiple quantum well tunneling injection lasers
|
Zhang, X
|
American Institute of Physics
|
1980
|
|
|
1415 |
|
GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices/
|
Nakajima, Fumito
|
American Institute of Physics
|
2001
|
|
|
1416 |
|
GaAs multilayer p^+-i homojunction far-infrared detectors
|
Perera, A. G. U
|
American Institute of Physics
|
1980
|
|
|
1417 |
|
GaAs nanocrystals formed by sequential ion implantation
|
White, C. W
|
American Institute of Physics
|
1980
|
|
|
1418 |
|
GaAs quantum cascade laser spectroscopy by tunnelling magnetotransport
|
Smirnov, D
|
North-Holland
|
2001
|
|
|
1419 |
|
GaAs quantum structures: Comparison between direct pseudopotential and single-band truncated-crystal calculations
|
Franceschetti, A
|
American Institute of Physics
|
1980
|
|
|
1420 |
|
GAAS: RECONSIDERING THE "TEN COMMANDMENTS". Practitioners need clear, relevant guidance.
|
Jacobson, Peter D.; Elliot, Robert K
|
Ameican Institute of Cerified Public Accountant
|
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