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H 1 IMAGING OF CASSIOPEIA I/
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Marvel, Kevin B
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American Institute of Physics
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2000
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| 2 |
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Hall mobility and free electron density at the SiC/SiO2 interface in 4H-SiC/
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Saks, N S
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American Institute of Physics
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2000
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| 3 |
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Heat capacity of hydrogenated diamond-like carbon films/
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Hakovirta, M
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American Institute of Physics
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2000
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| 4 |
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High-amplitude high-frequency oscillations of temperature, electron-hole pair concentration, and current in silicon-on-insulator structures/
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Dobrovolsky, Valentin N
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American Institute of Physics
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2000
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| 5 |
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High-brightness organic double-quantum-well electroluminescent devices/
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Huang, Jingsong
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American Institute of Physics
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2000
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| 6 |
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High-carbon concentrations at the silicon dioxide-silicon carbide interface identified by electron energy loss spectroscopy/
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Chang, K C
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American Institute of Physics
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2000
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| 7 |
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High coercivity in mechanically milled ThMn12-type Nd-Fe-Mo nitrides/
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Zhang, Xiao-dong
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American Institute of Physics
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2000
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| 8 |
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High-dielectric-constant Ta2O5/n-GaN metal-oxide-semiconductor structure/
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Tu, L W
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American Institute of Physics
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2000
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| 9 |
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High-dose Al-implanted 4H-SiC p+-n-n+ junctions/
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Kalinina, E
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American Institute of Physics
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2000
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| 10 |
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High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates/
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Frayssinet, E
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American Institute of Physics
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2000
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| 11 |
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High-energy ion-implantation-induced gettering of copper in silicon beyond the projected ion range: The trans-projected-range effect/
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Gueorguiev, Y M
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American Institute of Physics
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2000
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| 12 |
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High figure of merit in partially filled ytterbium skutterudite materials/
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Nolas, G S
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American Institute of Physics
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2000
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| 13 |
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Highly efficient 2% Nd:yttrium aluminum garnet ceramic laser/
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Lu, Jianren
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American Institute of Physics
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2000
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| 14 |
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Highly efficient unibond silicon-on-insulator blazed grating couplers/
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Ang, T W
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American Institute of Physics
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2000
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| 15 |
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Highly erbium-doped zinc-oxide thin film prepared by laser ablation and its 1.54 (micro)m emission dynamics/
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Komuro, Shuji
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American Institute of Physics
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2000
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| 16 |
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Highly parallel data storage system based on scanning probe arrays/
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Lutwyche, M I
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American Institute of Physics
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2000
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| 17 |
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Highly stable dye-sensitized solid-state solar cell with the semiconductor 4CuBr 3S(C4H9)2 as the hole collector/
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Tennakone, K
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American Institute of Physics
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2000
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| 18 |
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High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy/
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Manfra, M J
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American Institute of Physics
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2000
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| 19 |
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High nonlinearity of Ba0.6Sr0.4TiO3 films heteroepitaxially grown on MgO substrates/
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Park, B H
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American Institute of Physics
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2000
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| 20 |
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High-pressure process to produce GaN crystals/
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Gilbert, Donald R
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American Institute of Physics
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2000
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