| 381 |
|
High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition/
|
Guha, S
|
American Institute of Physics
|
2001
|
|
|
|
| 382 |
|
High quality CeO~2 film grown on Si(111) substrate by using low energy dual ion beam deposition technology
|
Huang, D
|
American Institute of Physics
|
1980
|
|
|
|
| 383 |
|
High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III-V nitrides
|
Vispute, R. D
|
American Institute of Physics
|
1980
|
|
|
|
| 384 |
|
High quality CuInSe~2 films grown on pseudo-lattice-matched substrates by molecular beam epitaxy
|
Niki, S
|
American Institute of Physics
|
1980
|
|
|
|
| 385 |
|
High quality epitaxial Si films onto gamma-Al~2O~3 (111)/Si (111) substrates using Al predeposition layers
|
Jung, Y.-C
|
American Institute of Physics
|
1980
|
|
|
|
| 386 |
|
High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 �
|
Chin, A
|
American Institute of Physics
|
1980
|
|
|
|
| 387 |
|
High-quality, faceted cubic boron nitride films grown by chemical vapor deposition/
|
Zhang, W J
|
American Institute of Physics
|
2001
|
|
|
|
| 388 |
|
High quality fluorinated silicon oxide films prepared by plasma enhancedchemical vapor deposition at 120 �
|
Song, J
|
American Institute of Physics
|
1980
|
|
|
|
| 389 |
|
High quality GaN-InGaN heterostructures grown on (111) silicon substrates
|
Yang, J. W
|
American Institute of Physics
|
1980
|
|
|
|
| 390 |
|
High-quality Ge films on Si substrates using Sb surfactant-mediated graded SiGe buffers/
|
Liu, J L
|
American Institute of Physics
|
2001
|
|
|
|
| 391 |
|
High-quality InGaN/GaN multiple quantum wells grown on Ga-polarity GaN by plasma-assisted molecular-beam epitaxy/
|
Shen, X Q
|
American Institute of Physics
|
2001
|
|
|
|
| 392 |
|
High quality InP on Si by conformal growth
|
Parillaud, O
|
American Institute of Physics
|
1980
|
|
|
|
| 393 |
|
High quality large-area CdTe(211)B on Si(211) grown by molecular beam epitaxy
|
Rujirawat, S
|
American Institute of Physics
|
1980
|
|
|
|
| 394 |
|
High-quality MgB2 films on boron crystals with onset Tc of 41.7 K/
|
Hur, N
|
American Institute of Physics
|
2001
|
|
|
|
| 395 |
|
High-quality Nb~3Sn thin films on sapphire prepared by tin vapor diffusion
|
Perpeet, M
|
American Institute of Physics
|
1980
|
|
|
|
| 396 |
|
High quality Nb/Al-AlO~x/Nb superconducting tunnel junctions for radiation detection
|
Joosse, K
|
American Institute of Physics
|
1980
|
|
|
|
| 397 |
|
High-quality p-n junctions with quaternary AlInGaN/InGaN quantum wells/
|
Chitnis, A
|
American Institute of Physics
|
2000
|
|
|
|
| 398 |
|
High-quality strain-relaxed SiGe films grown with low temperature Si buffer/
|
Luo, Y H
|
American Institute of Physics
|
2001
|
|
|
|
| 399 |
|
High quality superconducting tunnel junctions on Nb and Ta single crystals for radiation detection
|
Bruijn, M. P
|
American Institute of Physics
|
1980
|
|
|
|
| 400 |
|
High quality two-dimensional photonic crystal slab cavities/
|
Yoshie, Tomoyuki
|
American Institute of Physics
|
2001
|
|
|
|
