| 501 |
|
High-speed electrical sampling using optical second-harmonic generation
|
Nahata, A
|
American Institute of Physics
|
1980
|
|
|
|
| 502 |
|
High-speed fiber-optic sensor for magnetic-field mapping
|
Rengarajan, S
|
American Institute of Physics
|
1980
|
|
|
|
| 503 |
|
High-speed GaAs-based resonant-cavity-enhanced 1.3 (micro)m photodetector/
|
Kimukin, Ibrahim
|
American Institute of Physics
|
2000
|
|
|
|
| 504 |
|
High-speed GaAs metal-semiconductor-metal photodetectors with recessed metal electrodes
|
Yuang, R.-H
|
American Institute of Physics
|
1980
|
|
|
|
| 505 |
|
High-speed infrared detection by uncooled photovoltaic quantum well infrared photodetectors
|
Schneider, H
|
American Institute of Physics
|
1980
|
|
|
|
| 506 |
|
High-speed light modulation using complex refractive-index changes of electro-optic polymers/
|
Harada, Kenji
|
American Institute of Physics
|
2000
|
|
|
|
| 507 |
|
High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures
|
Xu, G. Y
|
American Institute of Physics
|
1980
|
|
|
|
| 508 |
|
High-speed massive imaging of hard disk data by using the spin-stand imaging technique/
|
Tse, C
|
American Institute of Physics
|
2003
|
|
|
|
| 509 |
|
High-speed optical parametric oscillator pumped with an electronically tuned Ti:sapphire laser
|
Akagawa, K
|
American Institute of Physics
|
1980
|
|
|
|
| 510 |
|
High-speed resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 GHz gain-bandwidth product
|
Nie, H
|
American Institute of Physics
|
1980
|
|
|
|
| 511 |
|
High speed signal transmission with magneto-couplers/
|
Ganzer, S
|
American Institute of Physics
|
2003
|
|
|
|
| 512 |
|
High stability amorphous-silicon-nitride thin-film diode ring switch
|
Johnson, M. T
|
American Institute of Physics
|
1980
|
|
|
|
| 513 |
|
High strength, low dielectric constant fluorinated silica xerogel films/
|
Gorman, B P
|
American Institute of Physics
|
2001
|
|
|
|
| 514 |
|
High-T~c edge junctions with Y~0~.~8Pr~0~.~2Ba~2Cu~2~.~7Co~0~.~3O~7~-~�barrier layers near the metal-insulator transition
|
Antognazza, L
|
American Institute of Physics
|
1980
|
|
|
|
| 515 |
|
High-Tc ramp-type Josephson junctions with a continually graded Y1-xPrxBa2Cu3Oy barrier/
|
Gao, J
|
American Institute of Physics
|
2001
|
|
|
|
| 516 |
|
High-T~c super conducting quantum inferference devices with slots or holes: Low 1/f noise in ambient magnetic fields
|
Dantsker, E
|
American Institute of Physics
|
1980
|
|
|
|
| 517 |
|
High-T~c superconductor/normal-metal/superconductor edge junctions and SQUIDs with integrated groundplanes
|
Hunt, B. D
|
American Institute of Physics
|
1980
|
|
|
|
| 518 |
|
High temperature adduct formation of trimethylgallium and ammonia
|
Thon, A
|
American Institute of Physics
|
1980
|
|
|
|
| 519 |
|
High temperature annealing effects on the electrical characteristics of C implanted Si
|
Lombardo, S
|
American Institute of Physics
|
1980
|
|
|
|
| 520 |
|
High-temperature annealing of AlGaN: Stress, structural, and compositional changes/
|
Rajasingam, S
|
American Institute of Physics
|
2003
|
|
|
|
