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Impact of plasma processing on integrated circuit technology migration: From 1 mum to 100 nm and beyond/
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Tachi, S
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Published for the Society by the American Institute of Physics
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2003
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| 2 |
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Improvement of bond strength of plasma-sprayed hydroxyapatite/titanium composite coatings on titanium: Partial nitriding of titanium deposits by rf thermal plasma/
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Inagaki, M
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Published for the Society by the American Institute of Physics
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2003
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| 3 |
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Improvement of luminance and luminous efficiency for optimal Penning gas mixtures in alternating current plasma display panels/
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Lee, S.-J
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Published for the Society by the American Institute of Physics
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2003
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| 4 |
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Indium tin oxide films with low resistivity and low internal stress/
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Takayama, S
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Published for the Society by the American Institute of Physics
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2003
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| 5 |
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Inductively coupled Cl~2/Ar plasma: Experimental investigation and modeling/
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Efremov, A. M
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Published for the Society by the American Institute of Physics
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2003
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| 6 |
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Inductively coupled plasmas in oxygen: Modeling and experiment/
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Kiehlbauch, M. W
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Published for the Society by the American Institute of Physics
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2003
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| 7 |
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Inelastic collisions of electrons and positrons in solids and the dawn of surface science/
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Duke, C. B
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Published for the Society by the American Institute of Physics
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2003
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| 8 |
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Influence of carbon content and average energy of deposited ions on mechanical and optical properties of Si-C-N films grown by plasma ion immersion processing/
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Afanasyev-Charkin, I. V
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Published for the Society by the American Institute of Physics
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2003
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| 9 |
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Influence of energetic bombardment on stress, resistivity, and microstructure of indium tin oxide films grown by radio frequency magnetron sputtering on flexible polyester substrates/
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Carcia, P. F
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Published for the Society by the American Institute of Physics
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2003
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| 10 |
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Influence of modeling and simulation on the maturation of plasma technology: Feature evolution and reactor design/
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Graves, D. B
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Published for the Society by the American Institute of Physics
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2003
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| 11 |
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Influence of sputtering conditions on microstructure and mechanical properties of Zr-Si-N films prepared by radio-frequency-reactive sputtering/
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Zhou, M
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Published for the Society by the American Institute of Physics
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2003
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| 12 |
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Influence of the incident angle of energetic carbon ions on the properties of tetrahedral amorphous carbon (ta-C) films/
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Liu, D
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Published for the Society by the American Institute of Physics
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2003
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| 13 |
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Influence of working gas pressure on structure and properties of WO~3 films reactively deposited by rf magnetron sputtering/
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Takahashi, T
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Published for the Society by the American Institute of Physics
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2003
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| 14 |
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Infrared spectrometer attachment assembly for use with vacuum and high-pressure cells/
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Wingrave, J. A
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Published for the Society by the American Institute of Physics
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2003
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| 15 |
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Infrared thermal annealing device/
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Gladys, M. J
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Published for the Society by the American Institute of Physics
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2003
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| 16 |
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Initial growth stage of nanoscaled TiN films: Formation of continuous amorphous layers and thickness-dependent crystal nucleation/
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Li, T. Q
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Published for the Society by the American Institute of Physics
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2003
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| 17 |
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Inorganic electret using SiO~2 thin films prepared by radio-frequency magnetron sputtering/
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Minami, T
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Published for the Society by the American Institute of Physics
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2003
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| 18 |
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In situ studies of the amorphous to microcrystalline transition of hot-wire chemical vapor deposition Si:H films using real-time spectroscopic ellipsometry/
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Levi, D. H
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Published for the Society by the American Institute of Physics
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2003
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| 19 |
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Interface broadening due to Ar^+ ion bombardment measured on Co/Cu multilayer at grazing angle of incidence/
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Barna, A
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Published for the Society by the American Institute of Physics
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2003
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| 20 |
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Interfacial interactions of polymer coatings with oxide-free phosphate films on metal surfaces/
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Wang, Y
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Published for the Society by the American Institute of Physics
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2003
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