| 201 |
|
InAs quantum wires in InP-based microdisks: Mode identification and continuous wave room temperature laser operation/
|
Seassal, C
|
American Institute of Physics
|
2000
|
|
|
|
| 202 |
|
InAsSb-based mid-infrared lasers (3.8-3.9 �) and light-emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition
|
Allerman, A. A
|
American Institute of Physics
|
1980
|
|
|
|
| 203 |
|
InAsSbP/InAsSb/InAs laser diodes (lambda = 3.2 �) grown by low-pressuremetal-organic chemical-vapor deposition
|
Diaz, J
|
American Institute of Physics
|
1980
|
|
|
|
| 204 |
|
InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy/
|
Li, Y F
|
American Institute of Physics
|
2001
|
|
|
|
| 205 |
|
InAs self-assembled quantum dots on InP by molecular beam epitaxy
|
Fafard, S
|
American Institute of Physics
|
1980
|
|
|
|
| 206 |
|
InAs self-organized quantum dashes grown on GaAs (211)B
|
Guo, S. P
|
American Institute of Physics
|
1980
|
|
|
|
| 207 |
|
Including getter effect in a numerical contrast calculation for micrographs: A numerical contrast calculation for electron beam induced current at gettered dislocations
|
Mohr, H
|
American Institute of Physics
|
1980
|
|
|
|
| 208 |
|
Inclusion of gauge bosons in the tensor formulation of the Dirac theory
|
Reifler, F
|
American Institute of Physics
|
1980
|
|
|
|
| 209 |
|
Incoherent collisions between one-dimensional steady-state photorefractive screening solitons
|
Shih, M.-F
|
American Institute of Physics
|
1980
|
|
|
|
| 210 |
|
Incoherent four-wave-mixing on nile blue and cresyl violet in glass and polymer at 5 K: Single-site line shape analysis
|
Zhang, Y
|
American Institute of Physics
|
1980
|
|
|
|
| 211 |
|
Incoherent interface of InAs grown directly on GAP(001)
|
Chang, J. C. P
|
American Institute of Physics
|
1980
|
|
|
|
| 212 |
|
Incoherently coupled soliton pairs in biased photorefractive crystals
|
Christodoulides, D. N
|
American Institute of Physics
|
1980
|
|
|
|
| 213 |
|
Incorporation and stability of carbon during low-temperature epitaxial growth of Ge~1~-~xC~x (x<0.1) alloys on Si(100): Microstructural and Ramanstudies
|
Yang, B.-K
|
American Institute of Physics
|
1980
|
|
|
|
| 214 |
|
Incorporation kinetics of indium and gallium in indium gallium nitride: A phenomenological model/
|
Storm, D F
|
American Institute of Physics
|
2001
|
|
|
|
| 215 |
|
Incorporation of angular momentum anisotropy into the analysis of resonant four-wave mixing spectroscopy
|
Wasserman, T. A. W
|
American Institute of Physics
|
1980
|
|
|
|
| 216 |
|
Incorporation of anomalous magnetic moments in the two-body relativisticwave equations of constraint theory
|
Jallouli, H
|
American Institute of Physics
|
1980
|
|
|
|
| 217 |
|
Incorporation of arsenic and phosphorus in Ga~xIn~1~-~xAs~yP~1~-~y alloys grown by molecular-beam epitaxy using solid phosphorus and arsenic valved cracking cells
|
Baillargeon, J. N
|
American Institute of Physics
|
1980
|
|
|
|
| 218 |
|
Incorporation of hydrogen in nitrogen and arsenic doped ZnSe epitaxial layers grown by organometallic vapor phase epitaxy
|
Bourret-Courchesne, E. D
|
American Institute of Physics
|
1980
|
|
|
|
| 219 |
|
Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy/
|
Namkoong, Gon
|
American Institute of Physics
|
2000
|
|
|
|
| 220 |
|
Incorporation of N into GaAsN under N overpressure and underpressure conditions/
|
Zhongzhe, S
|
American Institute of Physics
|
2003
|
|
|
|
기사
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