| 361 |
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Influence of light on the coercive field of repoled strontium barium niobate: The role of secondary repoling
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Smith, P. G. R
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American Institute of Physics
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1980
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| 362 |
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Influence of local heating on micro-Raman spectroscopy of silicon/
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Kouteva-Arguirova, S
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American Institute of Physics
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2003
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| 363 |
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Influence of low energy Ar-sputtering on the electronic properties of InAs-based quantum well structures
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Magnee, P. H. C
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American Institute of Physics
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1980
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| 364 |
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Influence of low-temperature buffer layers on the optical waveguiding properties of AlxGa1-xN alloys/
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Dogheche, E
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American Institute of Physics
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2001
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| 365 |
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Influence of magnetic field on the response of FeSiB wire delay lines
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Chiriac, H
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American Institute of Physics
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1980
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| 366 |
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Influence of master medium structure on magnetic contact duplication performance
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Sugita, R
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American Institute of Physics
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2003
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| 367 |
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Influence of melt depth in laser crystallized poly-Si thin film transistors
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Brotherton, S. D
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American Institute of Physics
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1980
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| 368 |
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Influence of metal sheet resistance on capacitance measurements of Schottky barriers
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Myrtveit, T. A
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American Institute of Physics
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1980
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| 369 |
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Influence of Mg doping on structural defects in AlGaN layers grown by metalorganic chemical vapor deposition/
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Cho, Hyung Koun
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American Institute of Physics
|
2001
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| 370 |
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Influence of microstructure on electromigration dynamics in submicron Alinterconnects: Real-time imaging
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Riege, S. P
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American Institute of Physics
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1980
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| 371 |
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Influence of microwave energy on semiconductors during ion implantation process/
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Gay, H-C
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American Institute of Physics
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2000
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| 372 |
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Influence of mobile space charges on the ferroelectric properties of (K~0~.~5~0Na~0~.~5~0)~2(Sr~0~.~7~5Ba~0~.~2~5)~4Nb~1~0O~3~0 ceramics
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Bu, S
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American Institute of Physics
|
1980
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| 373 |
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Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal-oxide semiconductor field-effect transistors
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Godoy, A
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American Institute of Physics
|
1980
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| 374 |
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Influence of molecular hydrogen on Ge island nucleation on Si(001)/
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Dentel, D
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American Institute of Physics
|
2000
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| 375 |
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Influence of molecular structure on anisotropic photoinduced decomposition of polyimide molecules/
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Usami, Kiyoaki
|
American Institute of Physics
|
2001
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| 376 |
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Influence of mole fraction on normal incidence bound-free absorption in p-doped In~xGa~1~-~xAs/GaAs strained quantum wells
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Tadic, M
|
American Institute of Physics
|
1980
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| 377 |
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Influence of N~2O oxidation of silicon on point defect injection kinetics in the high temperature regime
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Tsamis, C
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American Institute of Physics
|
1980
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| 378 |
|
Influence of Na and H~2O on the surface properties of Cu(In,Ga)Se~2 thinfilms
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Heske, C
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American Institute of Physics
|
1980
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| 379 |
|
Influence of nanocrystallization on the evolution of domain patterns and the magnetoimpedance effect in amorphous Fe73.5Cu1Nb3Si13.5B9 ribbons/
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Guo, H Q
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American Institute of Physics
|
2001
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| 380 |
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Influence of nanoscale geometry on the thermodynamics of electron field emission
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Fisher, T S
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American Institute of Physics
|
2001
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