| 381 |
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Influence of nanoscale surface curvature on prenucleation phenomena in chemical vapor deposition diamond growth
|
Louchev, O. A
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American Institute of Physics
|
1980
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| 382 |
|
Influence of Nd magnetic subsystem on spin-reorientation phase transition in Nd~2CuO~4 at low temperature
|
Knigavko, A. N
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American Institute of Physics
|
1980
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| 383 |
|
Influence of nickel substrate grain structure on YBa2Cu3O7-x supercurrent connectivity in deformation-textured coated conductors/
|
Feldmann, D M
|
American Institute of Physics
|
2000
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|
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| 384 |
|
Influence of nitrogen additions on hot-filament chemical vapor deposition of diamond
|
Bohr, S
|
American Institute of Physics
|
1980
|
|
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| 385 |
|
Influence of nitrogen profile on electrical characteristics of furnace-or rapid thermally nitrided silicon dioxide films
|
Bouvet, D
|
American Institute of Physics
|
1980
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| 386 |
|
Influence of noise in the route to chaos of directly modulated semiconductor lasers
|
Carpintero, G
|
American Institute of Physics
|
1980
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|
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| 387 |
|
Influence of nonstoichiometry on long-range order and its measurement in (GaAs)~1~-~xGe~2~x and related alloys/
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Holloway, H
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American Institute of Physics
|
2003
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|
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| 388 |
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Influence of nonstoichiometry on the Urbach's tails of absorption spectra for CuInSe~2 single crystals
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Shioda, T
|
American Institute of Physics
|
1980
|
|
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| 389 |
|
Influence of ohmic grain boundaries in ZnO varistors
|
Bartkowiak, M
|
American Institute of Physics
|
1980
|
|
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| 390 |
|
Influence of oxygen impurities on the crystallization mechanism of NiZr2 metallic glasses/
|
Boutet, S
|
American Institute of Physics
|
2001
|
|
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| 391 |
|
Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001)
|
Nayak, S
|
American Institute of Physics
|
1980
|
|
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| 392 |
|
Influence of oxygen plasma on electrical and physical parameters of Au-oxide-n-InP structures/
|
Touhami, R
|
American Institute of Physics
|
2003
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|
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| 393 |
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Influence of oxygen precipitation along dislocations on the strength of silicon crystals
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Yonenaga, I
|
American Institute of Physics
|
1980
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| 394 |
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Influence of particle adsorption probability on the stoichiometry of thin films grown by pulsed laser deposition/
|
Itina, T E
|
American Institute of Physics
|
2001
|
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| 395 |
|
Influence of phosphine on Ge/Si(001) island growth by chemical vapor deposition/
|
Kamins, T. I
|
American Institute of Physics
|
2003
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|
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| 396 |
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Influence of phosphorus diffusion on the recombination strength of dislocations in float zone silicon wafers
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Simon, J. J
|
American Institute of Physics
|
1980
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| 397 |
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Influence of pore roughness on high-frequency permeability/
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Cortis, A
|
American Institute of Physics
|
2003
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| 398 |
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Influence of postdeposition annealing on the structural and optical properties of sputtered zinc oxide film
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Gupta, V
|
American Institute of Physics
|
1980
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|
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| 399 |
|
Influence of precursor gases on the structure of plasma deposited amorphous hydrogenated carbon-nitrogen films
|
Franceschini, D. F
|
American Institute of Physics
|
1980
|
|
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| 400 |
|
Influence of preformed shock wave on the development of picosecond laser ablation plasma/
|
Mao, Samuel S
|
American Institute of Physics
|
2001
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기사
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