| 41 |
|
LETTERS - Equivalence Between Local Exponential Stability of the Unique Equilibrium Point and Global Stability for Hopfield-Type Neural Networks with Two Neurons/
|
Liang, X-B
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 42 |
|
LETTERS - General Solution of a Monopole Loaded by a Dielectric Hemisphere for Efficient Computation/
|
Leung, K W
|
Institute of Electrical and Electronics Engineers]
|
2000
|
|
|
|
| 43 |
|
LETTERS - HeteroAssociations of Spatio-Temporal Sequences with the Bidirectional Associative Memory/
|
Wang, L
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 44 |
|
LETTERS - Impedance and Polarization Characteristics of H and IHI Slot Antennas/
|
Porter, B G
|
Institute of Electrical and Electronics Engineers]
|
2000
|
|
|
|
| 45 |
|
LETTERS - Inset Microstripline-Fed Circularly Polarized Microstrip Antennas/
|
Chen, W-S
|
Institute of Electrical and Electronics Engineers]
|
2000
|
|
|
|
| 46 |
|
LETTERS - Learning Parametric Specular Reflectance Model by Radial Basis Function Network/
|
Cho, S-Y
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 47 |
|
LETTERS - Materials and Processing - Air-Gaps in 0.3 mm Electrical Interconnections/
|
Kohl, P A
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 48 |
|
LETTERS - Materials and Processing - Anomalous Diffusion of Boron in Silicon Driven Under the N2O Ambient/
|
Liu, D-G
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 49 |
|
LETTERS - Materials and Processing - A Shallow Trench Isolation Using Nitric Oxide (NO)-Annealed Wall Oxide to Suppress Inverse Narrow Width Effect/
|
Kim, J
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 50 |
|
LETTERS - Materials and Processing - Effect of H2 Content on Reliability of Ultrathin In-Situ Steam Generated (ISSG) SiO2/
|
Luo, T Y
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 51 |
|
LETTERS - Materials and Processing - Electrical and Reliability Characteristics of an Ultrathin TaOxNy Gate Dielectric Prepared by ND3 Annealing of Ta2O5/
|
Jung, H
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 52 |
|
LETTERS - Materials and Processing - Electronic Properties of Partially Crystalline SiOx Suboxide Films/
|
Wilk, G D
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 53 |
|
LETTERS - Materials and Processing - Field-Emission Enhancement of Mo-Tip Field-Emitted Arrays Fabricated by Using a Redox Method/
|
Lin, C M
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 54 |
|
LETTERS - Materials and Processing - Improved NiSi Salicide Process Using Presilicide N+/2 Implant for MOSFETs/
|
Lee, P S
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 55 |
|
LETTERS - Materials and Processing - Limitation of the Kirchhoff Boundary Conditions for Aerial Image Simulation in 157-nm Optical Lithography/
|
Yeung, M S
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 56 |
|
LETTERS - Materials and Processing - N-Type Porous Silicon Doping Using Phosphorous Oxychloride (POCl3)/
|
El-Bahar, A
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 57 |
|
LETTERS - Monopole Antenna Radiation into a Parallel-Plate Waveguide/
|
Eom, H J
|
Institute of Electrical and Electronics Engineers]
|
2000
|
|
|
|
| 58 |
|
LETTERS - PO Near-Field Expression of a Penetrable Planar Structure in Terms of a Line Integral/
|
Pelosi, G
|
Institute of Electrical and Electronics Engineers]
|
2000
|
|
|
|
| 59 |
|
LETTERS - Preconditioned Iterative Solution of Scattering from Rough Surfaces/
|
West, J C
|
Institute of Electrical and Electronics Engineers]
|
2000
|
|
|
|
| 60 |
|
LETTERS - Resource Sharing and Coevolution in Evolving Cellular Automata/
|
Werfel, J
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|