| 1681 |
|
Modeling Lewis acidity of transition aluminas by numerical simulations
|
Alvarez, L. J
|
American Institute of Physics
|
1980
|
|
|
|
| 1682 |
|
Modeling MFM images of periodic magnetization patterns
|
Madabhushi, R
|
American Institute of Physics
|
1980
|
|
|
|
| 1683 |
|
Modeling multipeak current-voltage characteristic and hysteresis phenomena for several resonant tunneling diodes connected in series
|
Gan, K.-J
|
American Institute of Physics
|
1980
|
|
|
|
| 1684 |
|
Modeling neutral dynamics in pulsed helium short-gap spark discharges
|
Eichwald, O
|
American Institute of Physics
|
1980
|
|
|
|
| 1685 |
|
Modeling of a GaN-based light-emitting diode for uniform current spreading/
|
Kim, Hyunsoo
|
American Institute of Physics
|
2000
|
|
|
|
| 1686 |
|
Modeling of Barkhausen noise in magnetic core material: Application of Preisach model
|
How, H
|
American Institute of Physics
|
1980
|
|
|
|
| 1687 |
|
Modeling of bombardment induced oxidation of silicon/
|
De Witte, H
|
American Institute of Physics
|
2001
|
|
|
|
| 1688 |
|
Modeling of charge quantization and wave function penetration effects in a metal-oxide-semiconductor system with ultrathin gate oxide/
|
Chim, W. K
|
American Institute of Physics
|
2003
|
|
|
|
| 1689 |
|
Modeling of compressible effects on the Reynolds stress using a Markovianized two-scale method
|
Yoshizawa, A
|
American Institute of Physics
|
1980
|
|
|
|
| 1690 |
|
Modeling of dust in a silane/hydrogen plasma/
|
Akdim, M. R
|
American Institute of Physics
|
2003
|
|
|
|
| 1691 |
|
Modeling of dynamic ferroelectric hysteresis loops in purified Rb~2ZnCl~4
|
Hauke, T
|
American Institute of Physics
|
1980
|
|
|
|
| 1692 |
|
Modeling of electrical conductance variation in substrate during initialgrowth of ultra thin film
|
Song, S.-K
|
American Institute of Physics
|
1980
|
|
|
|
| 1693 |
|
Modeling of electron backscattering from topographic marks
|
Mkrtchyan, M. M
|
American Institute of Physics
|
1980
|
|
|
|
| 1694 |
|
Modeling of electron scattering in thin manganese films on silicon by Monte Carlo methods
|
Toekesi, K
|
American Institute of Physics
|
1980
|
|
|
|
| 1695 |
|
Modeling of ferromagnetic semiconductor devices for spintronics/
|
Lebedeva, N
|
American Institute of Physics
|
2003
|
|
|
|
| 1696 |
|
Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation/
|
Blauw, M. A
|
American Institute of Physics
|
2003
|
|
|
|
| 1697 |
|
Modeling of hysteresis and magnetization curves for hexagonally ordered electrodeposited nanowires/
|
Fodor, P. S
|
American Institute of Physics
|
2003
|
|
|
|
| 1698 |
|
Modeling of incident particle energy distribution in plasma immersion ion implantation/
|
Tian, X B
|
American Institute of Physics
|
2000
|
|
|
|
| 1699 |
|
Modeling of indium diffusion and end-of-range defects in silicon using a kinetic Monte Carlo simulation/
|
Noda, T
|
American Institute of Physics
|
2003
|
|
|
|
| 1700 |
|
Modeling of magnetically enhanced capacitively coupled plasma sources: Ar discharges/
|
Kushner, M. J
|
American Institute of Physics
|
2003
|
|
|
|