| 1441 |
|
Proton tunneling assisted by the intermolecular vibration excitation. Temperature dependence of the proton spin-lattice relaxation time in benzoic acid powder
|
Sakun, V. P
|
American Institute of Physics
|
1980
|
|
|
|
| 1442 |
|
Prototypes of bifunctional photochromic and electro-optical systems/
|
Chidichimo, G
|
American Institute of Physics
|
2001
|
|
|
|
| 1443 |
|
Proximity and coupling effects in superconductor/ferromagnet multilayers
|
Chien, C. L
|
American Institute of Physics
|
1980
|
|
|
|
| 1444 |
|
Proximity effects at epitaxial Co/FeMn thin film systems (invited)/
|
Matthes, F
|
American Institute of Physics
|
2003
|
|
|
|
| 1445 |
|
Proximity effects of negative charge groups contact-electrified on thin silicon oxide in air
|
Uchihashi, T
|
American Institute of Physics
|
1980
|
|
|
|
| 1446 |
|
Pseudoclassical model for Weyl particle in 10 dimensions
|
Gitman, D. M
|
American Institute of Physics
|
1980
|
|
|
|
| 1447 |
|
Pseudo-ensemble simulations and Gibbs-Duhem integrations for polymers
|
Escobedo, F. A
|
American Institute of Physics
|
1980
|
|
|
|
| 1448 |
|
Pseudolattice theory of strong electrolyte solutions
|
Varela, L. M
|
American Institute of Physics
|
1980
|
|
|
|
| 1449 |
|
Pseudo moire dislocations appearing in x-ray diffraction topography
|
Yoshimura, J
|
American Institute of Physics
|
1980
|
|
|
|
| 1450 |
|
Pseudo-negative photocurrent spectroscopy in GaAs-AlAs superlattices
|
Schrottke, L
|
American Institute of Physics
|
1980
|
|
|
|
| 1451 |
|
Pseudospectral localized generalized Moeller-Plesset methods with a generalized valence bond reference wave function: Theory and calculation of conformational energies
|
Murphy, R. B
|
American Institute of Physics
|
1980
|
|
|
|
| 1452 |
|
p-T diagrams of the system of CH~3(CH~2)~n~-~1 self-assembled on the Au(111) crystal surface
|
Sadreev, A. F
|
American Institute of Physics
|
1980
|
|
|
|
| 1453 |
|
PtIn~2 ohmic contacts to n-GaAs via an In-Ga exchange mechanism
|
Chen, D. Y
|
American Institute of Physics
|
1980
|
|
|
|
| 1454 |
|
p- to n-type conversion in GaSb by ion beam milling
|
Panin, G. N
|
American Institute of Physics
|
1980
|
|
|
|
| 1455 |
|
Pt/p-strained-Si Schottky diode characteristics at low temperature
|
Chattopadhyay, S
|
American Institute of Physics
|
1980
|
|
|
|
| 1456 |
|
PtSi-n-Si Schottky-barrier photodetectors with stable spectral responsivity in the 120-250 nm spectral range
|
Solt, K
|
American Institute of Physics
|
1980
|
|
|
|
| 1457 |
|
p-type arsenic doping of Hg~1~-~xCd~xTe by molecular beam epitaxy
|
Zandian, M
|
American Institute of Physics
|
1980
|
|
|
|
| 1458 |
|
p-type conductivity in CuCr1-xMgxO2 films and powders/
|
Nagarajan, R
|
American Institute of Physics
|
2001
|
|
|
|
| 1459 |
|
p-type GaSb and Ga~0~.~8In~0~.~2Sb layers grown by metalorganic vapor phase epitaxy using silane as the dopant source
|
Ehsani, H
|
American Institute of Physics
|
1980
|
|
|
|
| 1460 |
|
P-type ion-implantation doping of Al^0^.^7^5Ga^0^.^2^5Sb with Be, C, Mg,and Zn
|
Zolper, J. C
|
American Institute of Physics
|
1980
|
|
|
|