| 601 |
|
Photoluminescence of the Se and Si DX centers in (Al~xGa~1~-x)~0~.~5In~0~.~5P (x < 0.5) grown by metalorganic vapor phase epitaxy
|
Lee, K.-J
|
American Institute of Physics
|
1980
|
|
|
|
| 602 |
|
Photoluminescence of transparent strontium-barium-niobate-doped silica nanocomposites/
|
Lu, S G
|
American Institute of Physics
|
2001
|
|
|
|
| 603 |
|
Photoluminescence of undoped and neutron-transmutation-doped InSe/
|
Homs, A A
|
American Institute of Physics
|
2000
|
|
|
|
| 604 |
|
Photoluminescence of undoped bulk InP grown by the liquid-encapsulated vertical Bridgman technique
|
Kang, J
|
American Institute of Physics
|
1980
|
|
|
|
| 605 |
|
Photoluminescence of Yb3+-doped CuInS2 crystals in magnetic fields/
|
Tsujii, N
|
American Institute of Physics
|
2001
|
|
|
|
| 606 |
|
Photoluminescence of Zn~xCd~yMg~1~-~x~-~ySe alloys as a manifestation of the breakdown of "common-anion rule"/
|
Zhou, X
|
American Institute of Physics
|
2003
|
|
|
|
| 607 |
|
Photoluminescence performance of pulsed-laser deposited Al2O3 thin films with large erbium concentrations/
|
Serna, R
|
American Institute of Physics
|
2001
|
|
|
|
| 608 |
|
Photoluminescence processes in Si~1~-~xGe~x/Si disordered superlattices grown on Si(001) substrate
|
Wakahara, A
|
American Institute of Physics
|
1980
|
|
|
|
| 609 |
|
Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy
|
Wu, J
|
American Institute of Physics
|
1980
|
|
|
|
| 610 |
|
Photoluminescence properties of GaN grown on compliant silicon-on-insulator substrates
|
Cao, J
|
American Institute of Physics
|
1980
|
|
|
|
| 611 |
|
Photoluminescence properties of GaNP/GaP multiple quantum wells grown by gas source molecular beam epitaxy/
|
Xin, H P
|
American Institute of Physics
|
2000
|
|
|
|
| 612 |
|
Photoluminescence properties of MgxZn1-xO alloy thin films fabricated by the sol-gel deposition method/
|
Zhao, Dongxu
|
American Institute of Physics
|
2001
|
|
|
|
| 613 |
|
Photoluminescence properties of ZnS epilayers
|
Tran, T. K
|
American Institute of Physics
|
1980
|
|
|
|
| 614 |
|
Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface
|
Bergman, J. P
|
American Institute of Physics
|
1980
|
|
|
|
| 615 |
|
Photoluminescence spectra of deformed Si-Ge alloy
|
Tanaka, K
|
American Institute of Physics
|
1980
|
|
|
|
| 616 |
|
Photoluminescence spectroscopy and decay time measurements of polycrystalline thin film CdTe/CdS solar cells/
|
Bridge, C J
|
American Institute of Physics
|
2000
|
|
|
|
| 617 |
|
Photoluminescence spectroscopy of erbium implanted gallium nitride
|
Thaik, M
|
American Institute of Physics
|
1980
|
|
|
|
| 618 |
|
Photoluminescence spectroscopy of self-assembled InAs quantum dots in strong magnetic field and under high pressure
|
Itskevich, I. E
|
American Institute of Physics
|
1980
|
|
|
|
| 619 |
|
Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN/
|
Bell, A
|
American Institute of Physics
|
2001
|
|
|
|
| 620 |
|
Photoluminescence stability of a cyanoterphenyl chromophore in liquid crystalline polymeric systems/
|
S�nchez, C
|
American Institute of Physics
|
2000
|
|
|
|