| 1061 |
|
PAPERS - Silicon Devices - Analytical Model and Characterization of Abnormally Structured MOSFETs/
|
Lee, J-S
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1062 |
|
PAPERS - Silicon Devices - A Physical Model for Hole Direct Tunneling Current in P+ Poly-Gate PMOSFETs with Ultrathin Gate Oxides/
|
Yang, K-N
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1063 |
|
PAPERS - Silicon Devices - Characteristics of P- and N-Channel Poly-Si/Si1-xGex/Si Sandwiched Conductivity Modulated Thin-Film Transistors/
|
Zhu, C
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1064 |
|
PAPERS - Silicon Devices - Chemical Reaction Concerns of Gate Metal with Gate Dielectric in Ta Gate MOS Devices: An Effect of Self-Sealing Barrier Configuration Interposed Between Ta and SiO2/
|
Ushiki, T
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1065 |
|
PAPERS - Silicon Devices - Coulomb Blockade Memory Using Integrated Single-Electron Transistor/Metal-Oxide-Semiconductor Transistor Gain Cells/
|
Durrani, Z A K
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1066 |
|
PAPERS - Silicon Devices - Critical Discussion on Unified 1/f Noise Models for MOSFETs/
|
Vandamme, E P
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1067 |
|
PAPERS - Silicon Devices - Density-Gradient Analysis of MOS Tunneling/
|
Ancona, M G
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1068 |
|
PAPERS - Silicon Devices - Embedded HIMOS(R) Flash Memory in 0.35 mm and 0.25 mm CMOS Technologies/
|
Wellekens, D
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1069 |
|
PAPERS - Silicon Devices - FinFET -- A Self-Aligned Double-Gate MOSFET Scalable to 20 nm/
|
Hisamoto, D
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1070 |
|
PAPERS - Silicon Devices - High-Performance and High-Reliability 8-nm Gate-Length DTMOS with Indium Super Steep Retrograde Channel/
|
Chang, S-J
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1071 |
|
PAPERS - Silicon Devices - Injection Efficiency of CHISEL Gate Currents in Short MOS Devices: Physical Mechanisms, Device Implications, and Sensitivity to Technological Parameters/
|
Esseni, D
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1072 |
|
PAPERS - Silicon Devices - Polysilicon Quantization Effects on the Electrical Properties of MOS Transistors/
|
Spinelli, A S
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1073 |
|
PAPERS - Silicon Devices - Power SI-MOSFET Operating with High Efficiency Under Low Supply Voltage/
|
Ohguro, T
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1074 |
|
PAPERS - Silicon Devices - Semiconductor Thickness and Back-Gate Voltage Effects on the Gate Tunnel Current in the MOS/SOI System with an Ultrathin Oxide/
|
Majkusiak, B
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1075 |
|
PAPERS - Silicon Devices - Short Channel Epi-MOSFET Model/
|
Suzuki, K
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1076 |
|
PAPERS - Silicon Devices - Silicon-on-Nothing (SON) -- An Innovative Process for Advanced CMOS/
|
Jurczak, M
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1077 |
|
PAPERS - Silicon Devices - Simulation and Optimization of Metal-Insulator-Semiconductor Inversion-Layer Silicon Solar Cells/
|
Kuhlmann, B
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1078 |
|
PAPERS - Silicon Devices - Thermal Stability of CoSi2 Film for CMOS Salicide/
|
Ohguro, T
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1079 |
|
PAPERS - Silicon Devices - Threshold Voltage Reduction Model for Buried Channel PMOSFETs Using Quasi-2-D Poisson Equation/
|
Lee, Y-T
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
| 1080 |
|
PAPERS - Silicon Devices - Tunneling into Interface States as Reliability Monitor for Ultrathin Oxide/
|
Ghetti, A
|
Institute of Electrical and Electronics Engineers
|
2000
|
|
|
|
