| 841 |
|
Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films
|
Heying, B
|
American Institute of Physics
|
1980
|
|
|
|
| 842 |
|
Role of water and oxygen in wet and dry oxidation of diamond/
|
Larsson, K
|
American Institute of Physics
|
2001
|
|
|
|
| 843 |
|
Roles of central and terminal carbon atoms in infrared and Raman intensities of polyenes: Analysis of atomic polar and polarizability tensors
|
Jin Yong Lee
|
American Institute of Physics
|
1980
|
|
|
|
| 844 |
|
Room- and low-temperature voltage tunable electroluminescence from a single layer of silicon quantum dots in between two thin SiO2 layers/
|
Photopoulos, P
|
American Institute of Physics
|
2000
|
|
|
|
| 845 |
|
Room-temperature 1.54 (micro)m electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n+-Si substrates by magnetron sputtering/
|
Ran, G Z
|
American Institute of Physics
|
2001
|
|
|
|
| 846 |
|
Room-temperature 1.54 mum photoluminescence from Er-doped Si-rich silica layers obtained by reactive magnetron sputtering/
|
Gourbilleau, F
|
American Institute of Physics
|
2003
|
|
|
|
| 847 |
|
Room temperature 1.54 � light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy
|
Du, C.-X
|
American Institute of Physics
|
1980
|
|
|
|
| 848 |
|
Room temperature active regenerative magnetic refrigeration: Magnetic nanocomposites/
|
Shir, F
|
American Institute of Physics
|
2003
|
|
|
|
| 849 |
|
Room temperature aging behavior of thermally imprinted Pt/SrBi2Ta2O9/Pt ferroelectric thin film capacitors/
|
Wu, Di
|
American Institute of Physics
|
2001
|
|
|
|
| 850 |
|
Room temperature coercivities of Tb~1~-~xDy~xFe~2 (110) molecular beam epitaxy grown films/
|
Beaujour, J.-M. L
|
American Institute of Physics
|
2003
|
|
|
|
| 851 |
|
Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
|
Heinrichsdorff, F
|
American Institute of Physics
|
1980
|
|
|
|
| 852 |
|
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes
|
Nakamura, S
|
American Institute of Physics
|
1980
|
|
|
|
| 853 |
|
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
|
Nakamura, S
|
American Institute of Physics
|
1980
|
|
|
|
| 854 |
|
Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
|
Nakamura, S
|
American Institute of Physics
|
1980
|
|
|
|
| 855 |
|
Room temperature crystal structure and relaxor ferroelectric behavior ofPb~0~.~5Ca~0~.~5TiO~3
|
Ranjan, R
|
American Institute of Physics
|
1980
|
|
|
|
| 856 |
|
Room-temperature detection of mobile impurities in compound semiconductors by transient ion drift
|
Lyubomirsky, I
|
American Institute of Physics
|
1980
|
|
|
|
| 857 |
|
Room temperature differential negative resistance in an Al/Zn~0~.~6~1Cd~0~.~3~9Se/n^+-InP device
|
Shum, K
|
American Institute of Physics
|
1980
|
|
|
|
| 858 |
|
Room temperature electroluminescence from a c-Sip-i-n structure/
|
Dittrich, Th
|
American Institute of Physics
|
2001
|
|
|
|
| 859 |
|
Room temperature electroluminescence from dislocation-rich silicon
|
Sveinbjoernsson, E. O
|
American Institute of Physics
|
1980
|
|
|
|
| 860 |
|
Room-temperature electroluminescence from Si/Ge/Si~1~-~xGe~x quantum-well diodes grown by molecular-beam epitaxy
|
Presting, H
|
American Institute of Physics
|
1980
|
|
|
|