| 861 |
|
Room-temperature electroluminescence of erbium-doped amorphous hydrogenated silicon
|
Gusev, O. B
|
American Institute of Physics
|
1980
|
|
|
|
| 862 |
|
Room-temperature electron spin dynamics in GaAs/AlGaAs quantum wells
|
Tackeuchi, A
|
American Institute of Physics
|
1980
|
|
|
|
| 863 |
|
Room temperature electro-optic effect in CdHgTe multiple quantum well heterostructures at 1.5 �
|
Mula, G
|
American Institute of Physics
|
1980
|
|
|
|
| 864 |
|
Room temperature epitaxy of Pd films on GaN under conventional vacuum conditions
|
Liu, O. Z
|
American Institute of Physics
|
1980
|
|
|
|
| 865 |
|
Room temperature ferromagnetic properties of (Ga, Mn)N/
|
Reed, M L
|
American Institute of Physics
|
2001
|
|
|
|
| 866 |
|
Room-temperature ferromagnetism in highly Cr-doped II-VI diluted magnetic semiconductor Zn~1~-~xCr~xTe/
|
Saito, H
|
American Institute of Physics
|
2003
|
|
|
|
| 867 |
|
Room-temperature holographic grating recording in CdF~2:Ga
|
Suchocki, A
|
American Institute of Physics
|
1980
|
|
|
|
| 868 |
|
Room temperature infrared intersubband photoluminescence in GaAs quantumwells
|
Sauvage, S
|
American Institute of Physics
|
1980
|
|
|
|
| 869 |
|
Room-temperature intense emission at 1534 nm in Er-doped Cd3Al2Si3O12 glass/
|
Lihui, Huang
|
American Institute of Physics
|
2000
|
|
|
|
| 870 |
|
Room temperature intrinsic optical transition in GaN epilayers: The band-to-band versus excitonic transitions
|
Smith, M
|
American Institute of Physics
|
1980
|
|
|
|
| 871 |
|
Room-temperature low-threshold low-loss continuous-wave operation of 2.26 mm GaInAsSb/AlGaAsSb quantum-well laser diodes/
|
Mermelstein, C
|
American Institute of Physics
|
2000
|
|
|
|
| 872 |
|
Room-temperature luminescence from erbium-doped silicon thin films prepared by laser ablation
|
Komuro, S
|
American Institute of Physics
|
1980
|
|
|
|
| 873 |
|
Room temperature luminescence from (Si/SiO2)n (n=1,2,3) multilayers grown in an industrial low-pressure chemical vapor deposition reactor/
|
Pucker, G
|
American Institute of Physics
|
2000
|
|
|
|
| 874 |
|
Room-temperature migration and interaction of ion beam generated defectsin crystalline silicon
|
Privitera, V
|
American Institute of Physics
|
1980
|
|
|
|
| 875 |
|
Room temperature nanocrystalline silicon single-electron transistors/
|
Tan, Y. T
|
American Institute of Physics
|
2003
|
|
|
|
| 876 |
|
Room-temperature near-band-edge photoluminescence from CulnSe~2 heteroepitaxial layers grown by metalorganic vapor phase epitaxy
|
Chichibu, S
|
American Institute of Physics
|
1980
|
|
|
|
| 877 |
|
Room-temperature near-ultraviolet electroluminescence from a linear silicon chain
|
Yuan, C.-H
|
American Institute of Physics
|
1980
|
|
|
|
| 878 |
|
Room-temperature negative differential resistance in AlAs/ErAs/AlAs heterostructures grown on (001)GaAs
|
Tanaka, M
|
American Institute of Physics
|
1980
|
|
|
|
| 879 |
|
Room temperature observation of single electron tunneling effect in self-assembled metal quantum dots on a semiconductor substrate
|
Park, K.-H
|
American Institute of Physics
|
1980
|
|
|
|
| 880 |
|
Room-temperature operation of an Yb-doped Gd~3Ga~5O~1~2 buried channel waveguide laser at 1.025 � wavelength
|
Shimokozono, M
|
American Institute of Physics
|
1980
|
|
|
|