| 1 |
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Semiconductor Devices, Materials, and Processing - Abrasive-Free Polishing for Copper Damascene Interconnection/
|
Kondo, S
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Electrochemical Society
|
2000
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| 2 |
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Semiconductor Devices, Materials, and Processing - A General Optimization for Slurry Injection during Chemical Mechanical Polishing/
|
Chou, F-C
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Electrochemical Society
|
2000
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| 3 |
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Semiconductor Devices, Materials, and Processing - A Method to Detect Oxygen Precipitates in Silicon Wafers by Highly Selective Reactive Ion Etching/
|
Nakashima, K
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Electrochemical Society
|
2000
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| 4 |
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Semiconductor Devices, Materials, and Processing - Amorphous CNx layers from Neon Electron Cyclotron Resonance Plasmas with N2 and CH4 as Precursors/
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Barbadillo, L
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Electrochemical Society
|
2000
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| 5 |
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Semiconductor Devices, Materials, and Processing - Analysis of Epitaxy of Polysilicon Films on Silicon (100) Wafers Deposited with Enlarged Microwave Plasma/
|
Ryoo, K
|
Electrochemical Society
|
2000
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| 6 |
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Semiconductor Devices, Materials, and Processing - Analytical Tools for the Characterization of Power Devices/
|
Schulze, H-J
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Electrochemical Society
|
2000
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|
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| 7 |
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Semiconductor Devices, Materials, and Processing - A New Dummy-Free Shallow Trench Isolation Concept for Mixed-Signal Applications/
|
Badenes, G
|
Electrochemical Society
|
2000
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|
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| 8 |
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Semiconductor Devices, Materials, and Processing - Anisotropic Etching of SiC/
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Syv�j�rvi, M
|
Electrochemical Society
|
2000
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|
|
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| 9 |
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Semiconductor Devices, Materials, and Processing - Annealing of Fowler-Nordheim Stress-Induced Leakage Currents in Thin Silicon Dioxide Films/
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Ang, C H
|
Electrochemical Society
|
2000
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| 10 |
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Semiconductor Devices, Materials, and Processing - Aspects of Barium Contamination in High Dielectric Dynamic Random Access Memories/
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Boubekeur, H
|
Electrochemical Society
|
2000
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| 11 |
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Semiconductor Devices, Materials, and Processing - Asymmetrical Critical Current Density and Its Influence on Electromigration of Two-Level W-Plug Interconnection/
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Huang, J S
|
Electrochemical Society
|
2000
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| 12 |
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Semiconductor Devices, Materials, and Processing - Characterization of Silicon Wafer Back Sides with Low Thermal Oxide Layers by Copper Deposition/
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Schmolke, R
|
Electrochemical Society
|
2000
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|
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| 13 |
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Semiconductor Devices, Materials, and Processing - Characterization of sub-30 nm p+/n Junction Formed by Plasma Ion Implantation/
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Baek, S K
|
Electrochemical Society
|
2000
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|
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| 14 |
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Semiconductor Devices, Materials, and Processing - Chemical Etching Characteristics of GaAs(100) Surfaces in Aqueous HF Solutions/
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Adachi, S
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Electrochemical Society
|
2000
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|
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| 15 |
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Semiconductor Devices, Materials, and Processing - Control of Arsenic Doping during Low Temperature CVD Epitaxy of Silicon (100)/
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Noort, W D van
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Electrochemical Society
|
2000
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| 16 |
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Semiconductor Devices, Materials, and Processing - Depth Effect on the Morphology Change Induced by Hydrogen Annealing of Grown-in Defects in Silicon/
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Fujimori, H
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Electrochemical Society
|
2000
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| 17 |
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Semiconductor Devices, Materials, and Processing - Detection of the Defects Induced by Boron High-Energy Ion Implantation of Silicon/
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Hsu, W-C
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Electrochemical Society
|
2000
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| 18 |
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Semiconductor Devices, Materials, and Processing - Dishing Effects during Chemical Mechanical Polishing of Copper in Acidic Media/
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Luo, Q
|
Electrochemical Society
|
2000
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| 19 |
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Semiconductor Devices, Materials, and Processing - Dose, Energy, and Ion Species Dependence of the Effective Plus Factor for Transient Enhanced Diffusion/
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Hobler, G
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Electrochemical Society
|
2000
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| 20 |
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Semiconductor Devices, Materials, and Processing - Effect of Hydrogen on the Structural and Electro-optical Properties of Zinc Oxide Thin Films/
|
Kang, Y-S
|
Electrochemical Society
|
2000
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기사
(97)
